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参数资料
| 型号： | HSMS-282B-BLKG |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes |
| 中文描述： | 表面贴装射频肖特基二极管 |
| 文件页数： | 4/14页 |
| 文件大小： | 213K |
| 代理商： | HSMS-282B-BLKG |
4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
0
0.10
0.20
0.30
0.50
0.40
I
F
V
F
– FORWARD VOLTAGE (V)
0.01
10
1
0.1
100
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
T
A
= –25
°
C
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
0
5
15
I
R
V
R
– REVERSE VOLTAGE (V)
10
1
1000
100
10
100,000
10,000
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
Figure 3. Total Capacitance vs.
Reverse Voltage.
0
2
8
6
C
T
V
R
– REVERSE VOLTAGE (V)
4
0
0.6
0.4
0.2
1
0.8
Figure 4. Dynamic Resistance vs.
Forward Current.
0.1
1
100
R
D
)
I
F
– FORWARD CURRENT (mA)
10
1
10
1000
100
V
F
- FORWARD VOLTAGE (V)
Figure 5. Typical V
f
Match, Series Pairs
and Quads at Mixer Bias Levels.
30
10
1
0.3
30
10
1
0.3
I
F
V
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
F
(Left Scale)
V
F
(Right Scale)
V
F
- FORWARD VOLTAGE (V)
Figure 6. Typical V
f
Match, Series Pairs
at Detector Bias Levels.
100
10
1
0.10
1.0
0.1
I
F
μ
A
V
F
0.15
0.20
0.25
I
F
(Left Scale)
V
F
(Right Scale)
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
-40
-30
18 nH
RF in
3.3 nH
100 pF
100 K
HSMS-282B Vo
0
V
O
P
in
– INPUT POWER (dBm)
-10
-20
0.001
0.01
1
0.1
-25
°
C
+25
°
C
+75
°
C
DC bias = 3
μ
A
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
-20
-10
RF in
100 pF
4.7 K
68
HSMS-282B
Vo
30
V
O
P
in
– INPUT POWER (dBm)
10
20
0
1E-005
0.0001
0.001
10
0.1
1
0.01
+25
°
C
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
C
12
10
9
8
7
6
2
0
6
8
10
4
相关PDF资料 |
PDF描述 |
|---|---|
| HSMS-282B-TR1G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282B-TR2G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282C-BLKG | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282C-TR1G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282C-TR2G | Surface Mount RF Schottky Barrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS-282B-BLKG | 制造商:Avago Technologies 功能描述:Schottky Diode |
| HSMS-282B-G | 制造商:Avago Technologies 功能描述:HSMS-282B Schottky barrier diode |
| HSMS-282B-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
| HSMS-282B-TR1G | 功能描述:肖特基二极管与整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| HSMS-282B-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
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