参数资料
型号: HSMS-282B-TR1G
英文描述: Surface Mount RF Schottky Barrier Diodes
中文描述: 表面贴装射频肖特基二极管
文件页数: 13/14页
文件大小: 213K
代理商: HSMS-282B-TR1G
13
Tape Dimensions and Product Orientation
For Outline SOT-23
9
°
MAX
A
0
P
P
0
D
P
2
E
F
W
D
1
Ko
8
°
MAX
B
0
13.5
°
MAX
t1
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
3.15
±
0.10
2.77
±
0.10
1.22
±
0.10
4.00
±
0.10
1.00 + 0.05
0.124
±
0.004
0.109
±
0.004
0.048
±
0.004
0.157
±
0.004
0.039
±
0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 + 0.10
4.00
±
0.10
1.75
±
0.10
0.059 + 0.004
0.157
±
0.004
0.069
±
0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 – 0.10
0.229
±
0.013
0.315 + 0.012 – 0.004
0.009
±
0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50
±
0.05
2.00
±
0.05
0.138
±
0.002
0.079
±
0.002
DISTANCE
BETWEEN
CENTERLINE
For Outline SOT-143
W
F
E
P
2
P
0
D
P
D
1
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
3.19
±
0.10
2.80
±
0.10
1.31
±
0.10
4.00
±
0.10
1.00 + 0.25
0.126
±
0.004
0.110
±
0.004
0.052
±
0.004
0.157
±
0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.50 + 0.10
4.00
±
0.10
1.75
±
0.10
0.059 + 0.004
0.157
±
0.004
0.069
±
0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30
0.10
0.254
±
0.013
0.315+ 0.012
0.004
0.0100
±
0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50
±
0.05
2.00
±
0.05
0.138
±
0.002
0.079
±
0.002
DISTANCE
A
0
9
°
MAX
9
°
MAX
t
1
B
0
K
0
相关PDF资料
PDF描述
HSMS-282B-TR2G Surface Mount RF Schottky Barrier Diodes
HSMS-282C-BLKG Surface Mount RF Schottky Barrier Diodes
HSMS-282C-TR1G Surface Mount RF Schottky Barrier Diodes
HSMS-282C-TR2G Surface Mount RF Schottky Barrier Diodes
HSMS-282E-BLKG Surface Mount RF Schottky Barrier Diodes
相关代理商/技术参数
参数描述
HSMS-282B-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes
HSMS-282B-TR2G 功能描述:肖特基二极管与整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
HSMS282C 制造商:未知厂家 制造商全称:未知厂家 功能描述:Surface Mount Zero Bias Schottky
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HSMS-282C-BLK 制造商:Avago Technologies 功能描述:Rectifier Diode, Doubler, Schottky, 15 Volt, SOT-323