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参数资料
| 型号： | HSMS-282E-TR2G |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes |
| 中文描述： | 表面贴装射频肖特基二极管 |
| 文件页数： | 2/14页 |
| 文件大小： | 213K |
| 代理商： | HSMS-282E-TR2G |
2
Electrical Specifications T
C
= 25
°
C, Single Diode
[4]
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
Maximum
Reverse
Leakage
I
R
(nA) @ Capacitance Resistance
V
R
(V)
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Forward
Voltage
V
F
(mV)
Typical
Dynamic
Part
Number
HSMS
[5]
Package
Marking
Code
Maximum
Lead
Code
Configuration
R
D
(
)
[6]
2820
2822
2823
2824
2825
2827
2828
2829
282B
282C
282E
282F
282K
C0
[3]
C2
[3]
C3
[3]
C4
[3]
C5
[3]
C7
[3]
C8
[3]
C9
[3]
C0
[7]
C2
[7]
C3
[7]
C4
[7]
CK
[7]
0
2
3
4
5
7
8
9
B
C
E
F
K
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Cross-over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
15
340
0.5
10
100
1
1.0
12
282L
282M
282N
282P
282R
CL
[7]
HH
[7]
NN
[7]
CP
[7]
OO
[7]
L
M
N
P
R
Test Conditions
I
R
= 100
μ
A
I
F
= 1 mA
[1]
V
F
= 0 V
f = 1 MHz
[2]
I
F
= 5 mA
Notes:
1.
V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (
τ
) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled
“
Quad Capacitance.
”
6. R
D
= R
S
+ 5.2
at 25
°
C and I
f
= 5 mA.
7. Package marking code is laser marked.
Absolute Maximum Ratings
[1]
T
C
= 25
°
C
Symbol
Parameter
Forward Current (1
μ
s Pulse) Amp
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
SOT-23/SOT-143 SOT-323/SOT-363
I
f
P
IV
T
j
T
stg
θ
jc
1
1
15
150
V
°
C
°
C
15
150
-65 to 150
500
-65 to 150
150
°
C/W
Notes:
1.
Operation in excess of any one of these conditions may result in permanent damage to
the device.
T
C
= +25
°
C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
2.
Notes:
1.
Package marking provides
orientation and identification.
See
“
Electrical Specifications
”
for
appropriate package marking.
2.
Pin Connections and
Package Marking
G
1
2
3
6
5
4
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|---|---|
| HSMS-282F-BLKG | Surface Mount RF Schottky Barrier Diodes |
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| HSMS-282F-TR2G | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282K-BLKG | Surface Mount RF Schottky Barrier Diodes |
| HSMS-282K-TR1G | Surface Mount RF Schottky Barrier Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HSMS282F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Surface Mount Zero Bias Schottky |
| HSMS-282F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:RF mixer/detector diode |
| HSMS-282F-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
| HSMS-282F-BLKG | 功能描述:肖特基二极管与整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| HSMS-282F-BLKG | 制造商:Avago Technologies 功能描述:Diode |
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