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参数资料
| 型号： | HTIP29C |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 32K |
| 代理商： | HTIP29C |
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP29C
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002.02.20
Page No. : 1/3
HTIP29C
HSMC Product Specification
Description
The HTIP29C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 30 W
Total Power Dissipation (Ta=25
°
C)....................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
-
-
-
-
-
40
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
300
1
0.7
1.3
-
75
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V
IC=1A, IB=125mA
IC=1A, VCE=4V
IC=0.2A, VCE=4V
IC=1A, VCE=4V
IC=0.2A, VCE=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-220
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