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参数资料
| 型号： | HUF75332S3ST |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 60A D2PAK |
| 标准包装： | 800 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19 毫欧 @ 60A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 85nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 25V |
| 功率 - 最大： | 145W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
HUF75332P3
PSPICE Electrical Model
.SUBCKT HUF75332 2 1 3 ;
CA 12 8 1.8e-9
CB 15 14 1.73e-9
rev 17 February 1999
LDRAIN
CIN 6 8 1.19e-9
10
DPLCAP
5
DRAIN
2
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RSLC2
RSLC1
51
5
ESLC
51
DBREAK
11
RLDRAIN
EBREAK 11 7 17 18 58.85
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
LGATE
-
ESG
+
EVTEMP
6
8
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1e-9
LSOURCE 3 7 1e-9
GATE
1
RLGATE
RGATE +
9 20
18 -
22
6
CIN
MSTRO
8
MMED
7
LSOURCE
SOURCE
3
K1 LSOURCE LGATE 0.0085
RSOURCE
RLSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RBREAK 17 18 RBREAKMOD 1
S1B
S2B
RVTEMP
RDRAIN 50 16 RDRAINMOD 4.5e-3
RGATE 9 20 1.3
RLDRAIN 2 5 10
RLGATE 1 9 10
RLSOURCE 3 7 10
RSLC1 5 51 RSLCMOD 1e-6
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
19
-
VBAT
+
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.95e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
RVTHRES
22
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),4.6))}
.MODEL DBODYMOD D (IS = 1.3e-12 RS = 3.0e-3 IKF = 20 XTI = 6 TRS1 = 2.7e-3 TRS2 = 7.0e-7 CJO = 1.7e-9 TT = 4.0e-8 M = 0.45 vj = 0.75)
.MODEL DBREAKMOD D (RS = 1.71e-2 IKF = 1.0e-5 TRS1 = -4.0e-4 TRS2 = -1.55e-5)
.MODEL DPLCAPMOD D (CJO = 1.8e-9 IS = 1e-30 N = 1 M = 0.9 vj = 1.45)
.MODEL MMEDMOD NMOS (VTO = 3.183 KP = 2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.3)
.MODEL MSTROMOD NMOS (VTO = 3.66 KP = 51.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.703 KP = 0.008 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 13)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = 4.5e-7)
.MODEL RDRAINMOD RES (TC1 = 1.16e-2 TC2 = 1.7e-5)
.MODEL RSLCMOD RES (TC1 = 3.96e-3 TC2 = 2.7e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-5)
.MODEL RVTHRESMOD RES (TC1 = -2.8e-3 TC2 = -1.0e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e-3 TC2 = 5.0e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -8 VOFF= -3)
VON = -3 VOFF= -8)
VON = 0 VOFF= 0.5)
VON = 0.5 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2005 Fairchild Semiconductor Corporation
HUF75332P3 Rev. C0
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