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参数资料
| 型号： | HUF75542P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 180nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2750pF @ 25V |
| 功率 - 最大： | 230W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
HUF75542P3
SABER Electrical Model
REV 15 Feb 00
template huf75542p3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (is = 2.5e-12, rs = 2.85e-3, xti = 5.5, trs1 = 2e-3, trs2 = 1e-6, cjo = 3.2e-9, tt = 5.5e-8, m = 0.6)
dp..model dbreakmod = (rs = 2.9e-1, trs1 = 1e-3, trs2 = 1e-6)
dp..model dplcapmod = (cjo = 3.4e-9, is = 1e-30, m = 0.8, nl = 10)
m..model mmedmod = (type=_n, vto = 3.06, kp = 4.8, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.5, kp = 80, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.67, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.0, voff = -4.5)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -4.5, voff = -6.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.5)
10
DPLCAP
5
LDRAIN
DRAIN
2
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.5)
RSLC1
RLDRAIN
c.ca n12 n8 = 4.4e-9
c.cb n15 n14 = 4.2e-9
c.cin n6 n8 = 2.5e-9
RSLC2
51
ISCL
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
-
50
DBREAK
l.ldrain n2 n5 = 1e-9
9
20
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
LGATE
GATE
l.lgate n1 n9 = 2.6e-9 1
l.lsource n3 n7 = 1.1e-9
RLGATE
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
RDRAIN
16
21
MMED
MSTRO
8
11
MWEAK
EBREAK
+
17
18
-
RSOURCE
7
DBODY
LSOURCE
SOURCE
3
res.rbreak n17 n18 = 1, tc1 = 1.3e-3, tc2 = -9e-7
res.rdrain n50 n16 = 5.5e-3, tc1 = 1.1e-2, tc2 = 2.5e-5
res.rgate n9 n20 = 1.0
res.rldrain n2 n5 = 10
12
S1A
13
8
S2A
14
13
15
17
RBREAK
RLSOURCE
18
res.rlgate n1 n9 = 26
S1B
S2B
RVTEMP
res.rlsource n3 n7 = 11
res.rslc1 n5 n51 = 1e-6, tc1 = 4.5e-3, tc2 = 1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.3e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -2.75e-3, tc2 = 0
res.rvthres n22 n8 = 1, tc1 = -2.5e-3, tc2 = -1.1e-5
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
19
-
VBAT
+
22
spe.ebreak n11 n7 n17 n18 = 87.2
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/230))** 2.5))
}
}
?2001 Fairchild Semiconductor Corporation
RVTHRES
HUF75542P3 Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75542P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 80V 75A TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes |
| HUF75542P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET ((NW)) |
| HUF75542P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75542S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75542S3ST | 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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