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| 型号： | HUF75545P3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 75A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 235nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 3750pF @ 25V |
| 功率 - 最大： | 270W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
HUF75545P3, HUF75545S3S
Data Sheet
N-Channel UltraFET Power MOSFET
80 V, 75 A, 10 m?
Packaging
Features
October 20 13
JEDEC TO-220AB
SOURCE
DRAIN
JEDEC TO-263AB
DRAIN
(FLANGE)
? Ultra Low On-Resistance
- r DS(ON) = 0.010 ?, V GS = 10V
DRAIN
(FLANGE)
GATE
GATE
SOURCE
? Simulation Models
- Temperature Compensated PSPICE? and SABER?
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
HUF75545P3
Symbol
D
HUF75545S3S T
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
Ordering Information
PART NUMBER
HUF75545P3
PACKAGE
TO-220AB
BRAND
75545P
G
HUF75545S3ST
TO- 263AB
75545S
S
Absolute Maximum Ratings
T C = 25 o C, Unless Otherwise Specified
HUF75545P3,
HUF75545S3S T
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Drain Current
Continuous (T C = 25 o C, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Continuous (T C = 100 o C, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
80
80
± 20
75
73
Figure 4
Figure 6
270
1.8
-55 to 175
300
260
V
V
V
A
A
W
W/ o C
o C
o C
o C
NOTES:
1. T J = 25 o C to 150 o C.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
?2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3S Rev. C 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75545P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75545P3_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75545P3_Q | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75545P3_R4932 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75545S3 | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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