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参数资料
型号： HUFA75307D3S
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数： 9/10页
文件大小： 217K
代理商： HUFA75307D3S
2001 Fairchild Semiconductor Corporation
HUFA75307P3, HUFA75307D3, HUFA75307D3S Rev. B
SABER Electrical Model
REV February 1999
template HUFA75307 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.6e-13, xti = 6, cjo = 3.5e-10, tt = 3.1e-8, n = 0.985, m = 0.45)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 5e-10, is = 1e-30, n = 10, m = 0.95)
m..model mmedmod = (type=_n, vto = 3.25, kp = 2.2, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.75, kp = 14.75, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.88, kp = 0.03, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.1, voff = -4)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -8.1)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 2, voff = 0)
c.ca n12 n8 = 4.5e-10
c.cb n15 n14 = 4.1e-10
c.cin n6 n8 = 2.154e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.97e-10
l.lsource n3 n7 = 2.39e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.12e-3, tc2 = 1e-6
res.rdbody n71 n5 = 1.28e-2, tc1 = 2.9e-3, tc2 = -4e-6
res.rdbreak n72 n5 = 0.25, tc1 = -4e-3, tc2 = 3e-5
res.rdrain n50 n16 = 1e-3, tc1 = 2.31-1, tc2 = 6e-4
res.rgate n9 n20 = 1.9
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 60
res.rlsource n3 n7 = 24
res.rslc1 n5 n51 = 1e-6, tc1 = 4e-3, tc2 = 1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.5e-2, tc1 = 1e-3, tc2 = 6e-6
res.rvtemp n18 n19 = 1, tc1 = -1.4e-3, tc2 = 1e-9
res.rvthres n22 n8 = 1, tc1 = -3.31e-3, tc2 = -1.49e-5
spe.ebreak n11 n7 n17 n18 = 56
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/35))** 4))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
RDBODY
RDBREAK
72
71
HUFA75307P3, HUFA75307D3, HUFA75307D3S
相关PDF资料
PDF描述
HUFA75307P3 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
HUFA75309D3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309D3S 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309P3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
相关代理商/技术参数
参数描述
HUFA75307D3ST 功能描述:MOSFET 15a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75307P3 功能描述:MOSFET 15a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75307P3_Q 功能描述:MOSFET 15a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75307T3ST 功能描述:MOSFET 15a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309D3 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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