参数资料
型号: HUFA75309D3
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
中文描述: 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件页数: 4/10页
文件大小: 217K
代理商: HUFA75309D3
2001 Fairchild Semiconductor Corporation
HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
-
350
-
pF
Output Capacitance
COSS
-
150
-
pF
Reverse Transfer Capacitance
CRSS
-39
-
pF
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 19A
-
1.25
V
Reverse Recovery Time
trr
ISD = 19A, dISD/dt = 100A/s-
-
50
ns
Reverse Recovered Charge
QRR
ISD = 19A, dISD/dt = 100A/s-
-
70
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (
oC)
P
O
W
E
R
DIS
S
IP
A
T
ION
M
U
L
T
IP
L
IE
R
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
5
10
15
20
50
75
100
125
150
175
0
25
I D
,
DRAIN
CURRENT
(
A
)
TC, CASE TEMPERATURE (
oC)
0.1
1
10-4
10-3
10-2
10-1
100
101
10-5
0.01
2
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
Z
θJC
,NORM
A
L
IZ
ED
T
H
E
R
M
A
L
IM
P
E
D
ANCE
HUFA75309P3, HUFA75309D3, HUFA75309D3S
相关PDF资料
PDF描述
HUFA75309D3S 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309P3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75309T3ST 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
HUFA75321D3 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321D3S 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
相关代理商/技术参数
参数描述
HUFA75309D3S 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309D3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309P3 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75309T3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube