参数资料
型号: HUFA75321D3
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
中文描述: 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件页数: 7/10页
文件大小: 226K
代理商: HUFA75321D3
2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
tP
VGS
0.01
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
RL
VGS
+
-
VDS
VDD
DUT
IG(REF)
VDD
Qg(TH)
VGS = 2V
Qg(10)
VGS = 10V
Qg(TOT)
VGS = 20V
VDS
VGS
Ig(REF)
0
Qgs
Qgd
VGS
RL
RGS
DUT
+
-
VDD
VDS
VGS
tON
td(ON)
tr
90%
10%
VDS
90%
10%
tf
td(OFF)
tOFF
90%
50%
10%
PULSE WIDTH
VGS
0
HUFA75321D3, HUFA75321D3S
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相关代理商/技术参数
参数描述
HUFA75321D3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3STQ 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUFA75321P3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321S3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube