参数资料
型号: HUFA75321D3S
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
中文描述: 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件页数: 6/10页
文件大小: 226K
代理商: HUFA75321D3S
2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves (Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
NORM
AL
IZ
ED
DRAI
N
T
O
S
O
URCE
TJ, JUNCTION TEMPERATURE (
oC)
ON
RESIST
ANCE
VGS = 10V, ID = 20A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
NORM
AL
IZ
ED
GA
T
E
TJ, JUNCTION TEMPERATURE (
oC)
T
HRESHOL
D
V
O
L
T
A
G
E
VGS = VDS, ID = 250A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
TJ, JUNCTION TEMPERATURE (
oC)
NORM
AL
IZ
ED
DRAIN
T
O
SO
URCE
ID = 250A
BREAKDO
WN
V
O
L
T
A
G
E
800
400
0
102030
40
50
C,
CAP
A
C
IT
ANCE
(
p
F
)
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
CISS
COSS
CRSS
60
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
8
6
4
0
V
GS
,G
A
T
E
T
O
SOURCE
V
O
L
T
A
G
E
(V
)
VDD = 30V
2
15
20
0
Qg, GATE CHARGE (nC)
510
ID = 20A
ID = 10A
ID = 5A
WAVEFORMS IN
DESCENDING ORDER:
25
HUFA75321D3, HUFA75321D3S
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HUFA75321D3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321D3STQ 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUFA75321P3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321S3S 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75321S3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube