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参数资料
型号： HUFA75333S3ST
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 66A I(D) | TO-263AB
中文描述： 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 66A条（丁）|对263AB
文件页数： 2/10页
文件大小： 657K
代理商： HUFA75333S3ST
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
115
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 56A, V
GS
= 10V (Figure 9)
-
0.021
0.025
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
0.74
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-262
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
R
R
DD
L
= 0.89
GS
= 5.1
= 50V, I
D
GS
56A,
=
, V
10V,
-
-
110
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
25
-
ns
Turn-Off Time
t
OFF
-
-
70
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
I
D
R
I
g(REF)
(Figure 13)
DD
L
= 0.89
= 50V,
56A,
= 1.0mA
-
110
130
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
57
75
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
3.7
4.5
nC
Gate to Source Gate Charge
Q
gs
-
9.8
-
nC
Reverse Transfer Capacitance
Q
gd
-
24
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
f = 1MHz
(Figure 12)
DS
= 25V, V
GS
= 0V,
-
2000
-
pF
Output Capacitance
C
OSS
-
500
-
pF
Reverse Transfer Capacitance
C
RSS
-
65
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 56A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
-
-
110
ns
Reverse Recovered Charge
Q
RR
I
SD
= 56A, dI
SD
/dt = 100A/
μ
s
-
-
320
nC
HUFA75639S3R4851
相关PDF资料
PDF描述
HUFA75337S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
HUFA75339S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
HUFA75343S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
HUFA75344S3ST TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
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相关代理商/技术参数
参数描述
HUFA75337G3 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75337P3 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75337S3S 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75337S3ST 功能描述:MOSFET 75a 55V 0.014Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUFA75339G3 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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