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参数资料
| 型号： | HUFA75339S3ST |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 75A条（丁）|对263AB |
| 文件页数： | 8/10页 |
| 文件大小： | 657K |
| 代理商： | HUFA75339S3ST |
2001 Fairchild Semiconductor Corporation
HUFA75639S3R4851 Rev. A
SABER Electrical Model
nom temp=25 deg c 115v Ultrafet
REV 19 Oct. 99
template r4851 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is=1.4e-12, xti=4.7, cjo=33e-10,tt=6.1e-8, m=0.7)
d..model dbreakmod = ()
d..model dplcapmod = (cjo=22e-10,is=1e-30,n=10,m=0.95, vj=1.0)
m..model mmedmod = (type=_n,vto=3.5,kp=4.8,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=3.97,kp=56.5,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3.11,kp=0.085,is=1e-30, tox=1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-6.0)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2.5,voff=4.95)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=4.95,voff=-2.5)
c.ca n12 n8 = 28.5e-10
c.cb n15 n14 = 26.5e-10
c.cin n6 n8 = 19e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 2.0e-9
l.lgate n1 n9 = 1e-9
l.lsource n3 n7 = 4.69e-10
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=0.8e-3,tc2=-1e-6
res.rdbody n71 n5 = 3.3e-3, tc1=2.0e-3, tc2=0.1e-5
res.rdbreak n72 n5 = 3.5e-1, tc1=1e-3, tc2=1e-6
res.rdrain n50 n16 = 13e-3, tc1=1e-2,tc2=1.75e-5
res.rgate n9 n20 = 0.7
res.rldrain n2 n5 = 20
res.rlgate n1 n9 = 10
res.rlsource n3 n7 = 4.69
res.rslc1 n5 n51 = 1e-6, tc1=2.8e-3,tc2=14e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4.5e-3, tc1=0,tc2=0
res.rvtemp n18 n19 = 1, tc1=-2.75e-3,tc2=0.05e-9
res.rvthres n22 n8 = 1, tc1=-2e-3,tc2=-1.75e-5
spe.ebreak n11 n7 n17 n18 = 126
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/115))** 4))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RDBODY
RDBREAK
72
71
HUFA75639S3R4851
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| HUFA75343G3 | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75343P3 | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75343S3S | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75343S3ST | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75344G3 | 功能描述:MOSFET 75a 55V 0.008Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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