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参数资料
| 型号： | HVM132 |
| 文件页数： | 1/3页 |
| 文件大小： | 20K |
| 代理商： | HVM132 |
Features
Low capacitance.(C=0.8pF max)
Low forward resistance. (r
f
=1.0
max)
MPAK package is suitable for high density
surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HVM131S
P5
MPAK
Outline
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
(Top View)
2
1
3
ADE-208-379A(Z)
Rev. 1
Oct. 1995
HVM131S
Silicon Epitaxial Planar Pin Diode
for Antenna Switching
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
65
V
Reverse voltage
V
R
I
F
*
P
d
*
T
j
Tstg
60
V
Forward current
100
mA
Power dissipation
150
mW
Junction temperature
125
°C
Storage temperature
-55 to +125
°C
* Two device total
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
r
f
—
—
1.0
V
I
F
= 10 mA
V
R
= 60 V
V
R
= 1 V , f = 1 MHz
I
F
= 10 mA, f = 100 MHz
Reverse current
—
—
0.1
μA
Capacitance
Forward resistance
* Per one device
—
—
—
—
0.8
1.0
pF
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相关代理商/技术参数 |
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