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参数资料
| 型号： | HY29F800ATR-70 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | REVERSE, TSOP-48 |
| 文件页数： | 10/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATR-70 |
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10
Rev. 1.1/Feb 02
HY29F800A
START
RESET# = V
(All protected sector groups
become unprotected)
Perform Program or Erase
Operations
RESET# = V
(All previously protected
sector groups return to
protected state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
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Notes:
1. Any number of Flash array read cycles are permitted.
2. Additional data cycles may follow. See text.
3. Any number of Electronic ID read cycles are permitted.
DEVICE COMMANDS
Device operations are initiated by writing desig-
nated address and data
command sequences
into
the device. A command sequence is composed
of one, two or three of the following sub-segments:
an
unlock cycle
, a
command cycle
and a
data
cycle
. Table 4 summarizes the composition of the
valid command sequences implemented in the
HY29F800A, and these sequences are fully de-
scribed in Table 5 and in the sections that follow.
Writing incorrect address and data values or writ-
ing them in the improper sequence resets the
HY29F800A to the Read mode.
Read/Reset 1, 2 Commands
The HY29F800A automatically enters the Read
mode after device power-up, after the RESET#
input is asserted and upon the completion of cer-
tain commands. Read/Reset commands are not
required to retrieve data in these cases.
A Read/Reset command must be issued in order
to read array data in the following cases:
If the device is in the Electronic ID mode, a
Read/Reset command must be written to re-
turn to the Read mode. If the device was in the
Erase Suspend mode when the device entered
the Electronic ID mode, writing the Read/Re-
set command returns the device to the Erase
Suspend mode.
Figure 3. Temporary Sector Unprotect
for obtaining specific data items as listed in Table
2:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
A read cycle at address 0xXXX01 returns the
device code:
- HY29F800AT = 0xD6 in Byte mode, 0x22D6
in Word mode.
- HY29F800AB = 0x58 in Byte mode, 0x2258
in Word mode.
A read cycle containing a sector address (Table
1) in A[18:12] and the address 0x02 in A[7:0]
returns 0x01 if that sector is protected, or 0x00
if it is unprotected.
Table 4. Composition of Command Sequences
Note:
When in the Electronic ID bus operation mode,
the device returns to the Read mode when V
is removed
from the A[9] pin. The Read/Reset command is not re-
quired in this case.
If DQ[5] (Exceeded Time Limit) goes High dur-
ing a program or erase operation, writing the
Read/Reset command returns the sectors to
the Read mode (or to the Erase Suspend mode
if the device was in Erase Suspend).
The Read/Reset command may also be used to
abort certain command sequences:
相关PDF资料 |
PDF描述 |
|---|---|
| HY29F800ATR-70I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-90 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-90I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-12 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-12I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29F800ATR-70I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-90 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATR-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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