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参数资料
| 型号： | HY29F800ATT-12I |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1Mx8/512Kx16），5伏只，闪存 |
| 文件页数： | 4/40页 |
| 文件大小： | 279K |
| 代理商： | HY29F800ATT-12I |
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4
Rev. 1.1/Feb 02
HY29F800A
SIGNAL DESCRIPTIONS
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MEMORY ARRAY ORGANIZATION
The 1 Mbyte Flash memory array is organized into
nineteen blocks called
sectors
(S0, S1, . . . , S18).
A sector is the smallest unit that can be erased
and which can be protected to prevent accidental
or unauthorized erasure. See the
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Bus Operations
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Command Definitions
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In the HY29F800A, four of the sectors, which com-
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boot block
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Kbytes (4 to 16 Kwords), while the remaining fif-
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bottom of the address range (HY29F800AB) or at
the top of the address range (HY29F800AT).
Table 1 defines the sector addresses and corre-
sponding address ranges for the top and bottom
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相关PDF资料 |
PDF描述 |
|---|---|
| HY29F800ATT-55 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-55I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-70 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-70I | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-90 | 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29F800ATT-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-55I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-70 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-70I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
| HY29F800ATT-90 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory |
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