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参数资料
| 型号： | HY29LV320BF-90I |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 |
| 封装： | 7 X 11 MM, FBGA-63 |
| 文件页数： | 17/44页 |
| 文件大小： | 323K |
| 代理商： | HY29LV320BF-90I |
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1
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Table 9. HY29LV320 Command Sequences
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e
y
C
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B
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4
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,
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q
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W
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F
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D
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D
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F
d
d
h
D
t
F
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D
t
S
d
d
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A
a
D
d
A
d
A
a
D
A
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d
A
a
d
A
a
d
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R
0
A
R
D
R
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E
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N
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U
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U
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U
p
C
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S
a
E
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E
R
7
1
3
4
4
3
2
2
6
6
1
1
3
3
X
5
5
5
5
X
X
5
5
X
X
5
5
X
5
5
5
5
X
X
5
5
X
X
5
5
X
5
5
5
5
X
X
5
5
X
X
5
5
0
A
A
A
A
0
0
A
A
0
0
A
A
F
A
A
A
A
9
A
A
A
B
3
A
A
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B
B
B
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2
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P
2
2
2
2
2
2
X
5
5
5
5
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5
5
5
5
5
5
0
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5
5
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8
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9
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2
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2
2
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5
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5
5
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1
3
9
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7
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A
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2
2
5
5
5
5
5
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5
5
0
0
9
9
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1
0
0
X
X
X
X
X
X
D
A
0
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B
X
X
X
X
0
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7
2
2
=
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T
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7
2
2
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d
=
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U
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P
B
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=
0
0
1
0
y
V
t
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P
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S
3
5
5
5
A
A
A
A
2
5
5
5
5
5
0
9
2
0
X
)
A
S
(
S
e
=
c
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S
2
t
B
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c
n
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R
3
5
5
5
A
A
A
A
2
5
5
5
5
5
0
9
3
0
X
X
X
y
a
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c
a
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O
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P
N
=
=
0
0
0
8
X
X
X
X
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Q
)
F
C
(
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C
0
1
1
5
5
X
X
X
8
9
E
Legend:
X = Don
’
t Care
PA/PD = Memory address/data for the program operation
RA/RD = Memory address/data for the read operation
SA = A[20:12], sector address of the sector to be erased or verified (see Tables 1 and 2).
Notes:
1. All values are in hexadecimal.
2. All bus cycles are write operations except all cycles of the Read command and the fourth cycle of Electronic ID command.
3. Data bits DQ[15:8] are don
’
t cares except for
‘
PD
’
in program cycles.
4. Address is A[10:0]. Other (upper) address bits are don
’
t cares except when
‘
SA
’
or
‘
PA
’
is required.
5. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
6. The Unlock Bypass Reset command is valid only while the device is in the Unlock Bypass mode.
7. The Erase Suspend command is valid only during a sector erase operation. The system may read and program in non-erasing sectors, or enter the Electronic
ID mode, while in the Erase Suspend mode.
8. The Erase Resume command is valid only during the Erase Suspend mode.
9. Multiple sectors may be specified for erasure. See command description.
10.See CFI section of specification for additional information.
11.See Electronic ID section of specification for additional information.
相关PDF资料 |
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| HY29LV320BT-70 | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BF-90 | 32 Mbit (2M x 16) Low Voltage Flash Memory |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29LV320BT-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-70 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-70I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-80 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
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