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参数资料
| 型号： | HY29LV320BT-12 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | SWITCH TOGGLE SPST SCREW 15A |
| 中文描述： | 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封装： | TSOP-48 |
| 文件页数： | 20/44页 |
| 文件大小： | 323K |
| 代理商： | HY29LV320BT-12 |
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20
r1.3/May 02
HY29LV320
If all sectors designated for erasing are protected,
the device returns to reading array data after ap-
proximately 100 μs. If at least one designated
sector is unprotected, the erase operation erases
the unprotected sectors, and ignores the command
for the sectors that are protected. Read array
operations cannot take place until the Automatic
Erase algorithm terminates, or until the erase op-
eration is suspended. Read operations while the
algorithm is in progress provide status data. When
the Automatic Erase algorithm is complete, the
device returns the erased sector(s) to the Read
(array data) mode.
Several methods are provided to allow the host to
determine the status of the erase operation, as
described in the Write Operation Status section.
Figure 8 illustrates the sector erase procedure.
Erase Suspend/Erase Resume Commands
The erase suspend command allows the system
to interrupt a sector erase operation to program
data into, or to read data from, any sector not
designated for erasure. The command causes
the erase operation to be suspended in all sec-
tors designated for erasure. This command is valid
only during the sector erase operation, including
during the 50 μs time-out period at the end of the
command sequence, and is ignored if it is issued
during chip erase or programming operations.
The HY29LV320 requires a maximum of 20 μs to
suspend the erase operation if the erase suspend
command is issued during active sector erasure.
However, if the command is written during the
sector erase time-out, the time-out is terminated
and the erase operation is suspended immediately.
Once the erase operation has been suspended,
the system can read array data from or program
data into any sector that is not designated for era-
sure (protected sectors cannot be programmed).
Normal read and write timings and command defi-
nitions apply. Reading at any address within erase-
suspended sectors produces status data on
DQ[7:0]. The host can use DQ[7], or DQ[6] and
DQ[2] together, to determine if a sector is actively
erasing or is erase-suspended. See
“
Write Op-
eration Status
”
for information on these status bits.
After an erase-suspended program operation is
complete, the device returns to the erase-sus-
pended read state and the host can initiate an-
other programming operation (or read operation)
within non-suspended sectors. The host can de-
termine the status of a program operation during
the erase-suspended state just as in the standard
programming operation.
Figure 8. Sector Erase Procedure
START
YES
Erase An
Additional Sector
Check Erase Status
(See Write Operation Status
Section)
Setup First (or Next) Sector
Address for Erase Operation
ERASE COMPLETE
Write First Five Cycles of
SECTOR ERASE
Command Sequence
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sector Erase
Time-out (DQ[3])
Expired
NO
YES
NO
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Sectors that require erasure but
which were not specified in this
erase cycle must be erased later
using a new command sequence
相关PDF资料 |
PDF描述 |
|---|---|
| HY29LV320TF-12 | 122 x 32 pixel format, LED Backlight available |
| HY29LV320TF-12I | 122 x 32 pixel format, LED Backlight available |
| HY29LV320TT-12 | 150 x 32 pixel format, LED Backlight available |
| HY29LV320TT-12I | 150 x 32 pixel format, LED Backlight available |
| HY57V283220LT-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29LV320BT-12I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-70 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-70I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-80 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-80I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
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