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| 型号： | HY29LV320BT-80 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | RP12 (AW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 12 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Five-Sided Shield; No Derating to 61??C; Standard DIP24 Pinning; Efficiency to 88% |
| 中文描述： | 2M X 16 FLASH 3V PROM, 80 ns, PDSO48 |
| 封装： | TSOP-48 |
| 文件页数： | 2/44页 |
| 文件大小： | 323K |
| 代理商： | HY29LV320BT-80 |
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2
r1.3/May 02
HY29LV320
GENERAL DESCRIPTION
The HY29LV320 is a 32 Mbit, 3 volt-only CMOS
Flash memory organized as 2,097,152 (2M) words.
The device is available in 48-pin TSOP and 63-
ball FBGA packages. Word-wide data (x16) ap-
pears on DQ[15:0].
The HY29LV320 can be programmed and erased
in-system with a single 3 volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a higher voltage V
PP
power supply to perform those functions. The de-
vice can also be programmed in standard EPROM
programmers. Access times as fast as 70ns over
the full operating voltage range of 2.7 - 3.6 volts
are offered for timing compatibility with the zero
wait state requirements of high speed micropro-
cessors. To eliminate bus contention, the
HY29LV320 has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device is compatible with the JEDEC single-
power-supply Flash command set standard. Com-
mands are written to the command register using
standard microprocessor write timings, from where
they are routed to an internal state-machine that
controls the erase and programming circuits.
Device programming is performed a word at a time
by executing the four-cycle Program Command
write sequence. This initiates an internal algorithm
that automatically times the program pulse widths
and verifies proper cell margin. Faster program-
ming times are achieved by placing the
HY29LV320 in the Unlock Bypass mode, which
requires only two write cycles to program data in-
stead of four.
The HY29LV320 features a sector architecture and
is offered in two versions:
HY29LV320B
- a device with boot-sector archi-
tecture with the boot sectors at the bottom of the
address range, containing one 8KW, two 4KW,
one 16KW and sixty-three 32KW sectors.
HY29LV320T
- a device with boot-sector archi-
tecture with the boot sectors at the top of the
address range, containing one 8KW, two 4KW,
one 16KW and sixty-three 32KW sectors.
The HY29LV320
’
s sector erase architecture allows
any number of array sectors to be erased and re-
programmed without affecting the data contents
of other sectors. Device erasure is initiated by
executing the Erase Command sequence. This
initiates an internal algorithm that automatically
preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
As during programming cycles, the device auto-
matically times the erase pulse widths and veri-
fies proper cell margin. Sectors are arranged into
designated groups for purposes of protection and
unprotection. Sector Group Protection optionally
disables both program and erase operations in any
combination of the sector groups of the memory
array, while Temporary Sector Group Unprotect
allows in-system erasure and code changes in
previously protected sector groups. Erase Sus-
pend enables the user to put erase on hold for
any period of time to read data from, or program
data to, any sector that is not selected for era-
sure. True background erase can thus be
achieved. The device is fully erased when shipped
from the factory.
Addresses and data needed for the programming
and erase operations are internally latched during
write cycles, and the host system can detect
completion of a program or erase operation by
observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (Toggle) status bits.
Hardware data protection measures include a low
V
CC
detector that automatically inhibits write op-
erations during power transitions.
After a program or erase cycle has been com-
pleted, or after assertion of the RESET# pin (which
terminates any operation in progress), the device
is ready to read data or to accept another com-
mand. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
The Secured Sector is an extra 128 word sector
capable of being permanently locked at the fac-
tory or by customers. The Secured Indicator Bit
(accessed via the Electronic ID mode) is perma-
nently set to a
‘
1
’
if the part is factory locked, and
permanently set to a
‘
0
’
if customer lockable. This
way, customer lockable parts can never be used
to replace a factory locked part. Factory locked
parts provide several options. The Secured Sec-
tor may store a secure, random 8-word ESN (Elec-
tronic Serial Number), customer code pro-
grammed at the factory, or both. Customer Lock-
相关PDF资料 |
PDF描述 |
|---|---|
| HY29LV320 | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320B | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-12I | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-70I | 32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-80I | 32 Mbit (2M x 16) Low Voltage Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY29LV320BT-80I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-90 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320BT-90I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320T | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
| HY29LV320TF-12 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
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