参数资料
型号: HY51S64403HG(HGL)
英文描述: 16Mx4|3.3V|8K|45|FP/EDO DRAM - 64M
中文描述: 16Mx4 | 3.3 | 8K的| 45 |计划生育/ EDO公司的DRAM - 6400
文件页数: 1/12页
文件大小: 104K
代理商: HY51S64403HG(HGL)
HY51V(S)16160HG/HGL
1M x 16Bit Fast Page DRAM
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.0.1/Apr.01
DESCRIPTION
The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.
HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utiliz-
ing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high
speed access mode. Multiplexed address inputs permit the HY51V(S)16160HG/HGL to be packaged in
standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities
and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability
with high performance logic families such as Schottky TTL.
FEATURES
Fast Page Mode capability
Read-modify-write capability
Multi-bit parallel test capability
TTL(3.3V) compatible inputs and outputs
/RAS only, CAS-before-/RAS, Hidden and self
refresh(L-version) capability
Fast access time and cycle time
ORDERING INFORMATION
Part No
tRAC
tCAC
tRC
tPC
HY51V(S)16160HG/HGL-5
50ns
13ns
90ns
35ns
HY51V(S)16160HG/HGL-6
60ns
15ns
110ns
40ns
HY51V(S)16160HG/HGL-7
70ns
18ns
130ns
45ns
50ns
60ns
70ns
Active
396mW
360mW
324mW
Standby
7.2mW(CMOS level Max)
0.54mW (L-version : Max)
Part Number
Access Time
Package
HY51V(S)16160HGJ/HG(L)J-5
HY51V(S)16160HGJ/HG(L)J-6
HY51V(S)16160HGJ/HG(L)J-7
50ns
60ns
70ns
400mil 42pin SOJ
HY51V(S)16160HGT/HG(L)T-5
HY51V(S)16160HGT/HG(L)T-6
HY51V(S)16160HGT/HG(L)T-7
50ns
60ns
70ns
400mil 44(50)pin TSOP-II
PRELIMINARY
JEDEC standard pinout
42pin plastic SOJ/44(50)pin TSOP-II(400mil)
Single power supply of 3.3V +/- 0.3V
Battery back up operation(L-version)
2 /CAS byte control
Power dissipation
Refresh cycle
Part No
Ref
Normal
L-part
HY51V16160HG
4K
64ms
HY51V16160HGL
4K
128ms
(S) : Self refresh, (L) : Low power
相关PDF资料
PDF描述
HY51S65163HG(HGL) 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
HY51S65173HG(HGL) 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
HY51S65403HG(HGL) 16Mx4|3.3V|4K|45|FP/EDO DRAM - 64M
HY51S65803HG(HGL) 8Mx8|3.3V|4K|45|FP/EDO DRAM - 64M
HY51V65173HG(HGL) 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
相关代理商/技术参数
参数描述
HY51V65164ATC-60 制造商:Hyundai 功能描述:
HY52 制造商:AEARO 功能描述:HYGIENE KIT OPTIME II DEFENDER 制造商:3M Electronic Products Division 功能描述:Hygiene Kit for Optime II Ear Defender
HY5203-015M 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC
HY5203-015R 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC
HY5203-015Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC