参数资料
型号: HY51V65173HG(HGL)
英文描述: 4Mx16|3.3V|4K|45|FP/EDO DRAM - 64M
中文描述: 4Mx16 | 3.3 | 4K的| 45 |计划生育/ EDO公司的DRAM - 6400
文件页数: 7/12页
文件大小: 104K
代理商: HY51V65173HG(HGL)
HY51V(S)16160HG/HGL
Rev.0.1/Apr.01
7
- continued -
Read Cycle
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
/OE to Din delay time
t
ODD
13
-
15
-
18
-
ns
5
/OE delay time from Din
t
DZO
0
-
0
-
0
-
ns
6
/CAS delay time from Din
tDZC
0
-
0
-
0
-
ns
6
Transition time ( Rise and Fall)
t
T
3
50
3
50
3
50
ns
7
Refresh period
t
REF
-
64
-
64
-
64
ms
4K Ref.
Refresh period (L-version)
-
128
-
128
-
128
ms
4K Ref.
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Access time from /RAS
t
RAC
-
50
-
60
-
70
ns
8,9
Access time from /CAS
t
CAC
-
13
-
15
-
18
ns
9,10,
17
Access time from column address
tAA
-
25
-
30
-
35
ns
9,11,
17
Access time from /OE
t
OAC
-
13
-
15
-
18
ns
9,25
Read command set-up time
t
RCS
0
-
0
-
0
-
ns
Read command hold time to /CAS
tRCH
0
-
0
-
0
-
ns
12,22
Read command hold time to /RAS
t
RRH
5
-
5
-
5
-
ns
12
Column address to /RAS lead time
t
RAL
25
-
30
-
35
-
ns
Column address to /CAS lead time
tCAL
25
-
30
-
35
-
ns
/CAS to output in low-Z
tCLZ
0
-
0
-
0
-
ns
Output data hold time
t
OH
3
-
3
-
3
-
ns
Output data hold time from /OE
tOHO
3
-
3
-
3
-
ns
Output buffer turn off time to /OE
t
OEZ
-
13
-
15
-
15
ns
13
Output buffer turn off time
t
OFF
-
13
-
15
-
15
ns
13
/CAS to Din delay time
tCDD
13
-
15
-
18
-
ns
5
相关PDF资料
PDF描述
HY51V65403HG(HGL) 16Mx4|3.3V|4K|45|FP/EDO DRAM - 64M
HY51S16400HG(HGL) 4Mx4|3.3V|4K|5/6/7|FP/EDO DRAM - 16M
HY51V16100BSLR-60 x1 Fast Page Mode DRAM
HY51V16100BSLR-70 x1 Fast Page Mode DRAM
HY51V16100BSLR-80 x1 Fast Page Mode DRAM
相关代理商/技术参数
参数描述
HY52 制造商:AEARO 功能描述:HYGIENE KIT OPTIME II DEFENDER 制造商:3M Electronic Products Division 功能描述:Hygiene Kit for Optime II Ear Defender
HY5203-015M 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC
HY5203-015R 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC
HY5203-015Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC
HY5203-022M 制造商:未知厂家 制造商全称:未知厂家 功能描述:Logic IC