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参数资料
| 型号： | HY57V283220LT-S |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4 Banks x 1M x 32Bit Synchronous DRAM |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件页数： | 6/15页 |
| 文件大小： | 916K |
| 代理商： | HY57V283220LT-S |
Rev. 0.9 / July 2004
6
HY57V283220(L)T(P) / HY5V22(L)F(P)
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V
2.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration with no input clamp diodes
3.V
IL
(min) is acceptable -2.0V AC pulse width with
≤
3ns of duration with no input clamp diodes
AC OPERATING CONDITION
(TA=0 to 70
°
C
,
3.0V
≤
V
DD
≤
3.6V, V
SS
=0V - Note1)
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD,
V
DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature T Time
T
SOLDER
260
10
°
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1
Input high voltage
V
IH
2.0
3.0
V
DDQ
+ 0.3
V
1,2
Input low voltage
V
IL
- 0.3
0
0.8
V
1,3
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
1
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| HY57V283220T-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-55 | 4 Banks x 1M x 32Bit Synchronous DRAM |
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相关代理商/技术参数 |
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|---|---|
| HY57V283220T | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-6 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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