参数资料
型号: HY57V283220LTP-8
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 4 Banks x 1M x 32Bit Synchronous DRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
封装: 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
文件页数: 1/15页
文件大小: 916K
代理商: HY57V283220LTP-8
HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
Revision History
Revision No.
History
Remark
0.1
Defined Preliminary Specification
0.2
1) Modified FBGA Ball Configuration Typo.
2) Changed Functional Block Diagram from A10 to A11.
3) Changed V
DD
min from 3.0V to 3.135V.
4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.
5) Insert t
AC2
Value.
6) Insdrt t
RAS
& CLK Value.
0.3
Defined I
DD
Spec.
0.4
Delited Preliminary.
0.5
Changed I
DD
Spec.
0.6
133MHz Speed Added
0.7
Changed FBGA Package Size from 11x13 to 8x13.
0.8
1) Changed V
DD
min from 3.135V to 3.0V.
2) Changed V
IL
min from V
SSQ
-0.3V to -0.3V.
0.9
Modified of size erra. (Page15)
(Equation :
13.00
±
10
-> 13.00
±
0.10)
相关PDF资料
PDF描述
HY57V283220LTP-H 4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LTP-P 4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LTP-S 4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LT-S 4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220T-5 4 Banks x 1M x 32Bit Synchronous DRAM
相关代理商/技术参数
参数描述
HY57V283220LTP-H 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LTP-P 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LTP-S 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220LT-S 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM
HY57V283220T 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM