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参数资料
| 型号： | HY57V283220T-7 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4 Banks x 1M x 32Bit Synchronous DRAM |
| 中文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件页数： | 8/15页 |
| 文件大小： | 916K |
| 代理商： | HY57V283220T-7 |
Rev. 0.9 / July 2004
8
HY57V283220(L)T(P) / HY5V22(L)F(P)
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V283220T(P)(HY5V22F(P))-5/55/6/7/H/8/P/S
4.HY57V283220LT(P)(HY5V22LF(P))-5/55/6/7/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-5
-55
-6
-7
-H
-8
-P
S
Operating Current
IDD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
120
120
110
100
100
100
90
90
mA
1
Precharge Standby Current
in power down mode
IDD2P
CKE
≤
V
IL
(max), t
CK
= 10ns
2
mA
IDD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
1
Precharge Standby Current
in non power down mode
IDD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= 10ns Input signals are changed one
time during 2clks. All other pins
≥
VDD-
0.2V or
≤
0.2V
14
mA
IDD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
9
Active Standby Current
in power down mode
IDD3P
CKE
≤
V
IL
(max), t
CK
= 10ns
7
mA
IDD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
6
Active Standby Current
in non power down mode
IDD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= 10ns
Input signals are changed
one time during 2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
17
mA
IDD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
13
Burst Mode Operating
Current
IDD4
t
t
CK
≥
t
CK
(min),
I
OL
=0mA
All banks active
CL=3
230
220
200
180
180
150
130
130
mA
1
CL=2
-
-
-
-
-
-
130
130
Auto Refresh Current
IDD5
t
RC
≥
t
RC
(min), All banks active
170
160
150
140
140
140
140
140
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
3
0.8
4
相关PDF资料 |
PDF描述 |
|---|---|
| HY57V283220T-8 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-H | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-P | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220TP-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220TP-55 | 4 Banks x 1M x 32Bit Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY57V283220T-8 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T-I | 制造商:未知厂家 制造商全称:未知厂家 功能描述:4Mx32|3.3V|4K|55/6/7/8/P/S|SDR SDRAM - 128M |
| HY57V283220T-P | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220TP-5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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