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参数资料
| 型号： | HY5DV651622TC-G7 |
| 英文描述： | DDR Synchronous DRAM |
| 中文描述： | DDR同步DRAM |
| 文件页数： | 12/27页 |
| 文件大小： | 273K |
| 代理商： | HY5DV651622TC-G7 |
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Rev. 0.3/May. 02
12
HY5DV281622AT
OPERATION COMMAND TRUTH TABLE - IV
Note :
1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input,
BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation.
2. All entries assume that CKE was active(high level) during the preceding clock cycle.
3. If both banks are idle and CKE is inactive(low level), then in power down mode.
4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of
that bank.
5. If both banks are idle and CKE is inactive(low level), then self refresh mode.
6. Illegal if tRCD is not met.
7. Illegal if tRAS is not met.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Illegal if tRRD is not met.
10. Illegal for single bank, but legal for other banks in multi-bank devices.
11. Illegal for all banks.
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
WRITE
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
11
L
L
H
H
BA, RA
ACT
ILLEGAL
11
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
MODE
REGISTER
ACCESSING
H
X
X
X
X
DSEL
NOP - Enter IDLE after tMRD
L
H
H
H
X
NOP
NOP - Enter IDLE after tMRD
L
H
H
L
X
BST
ILLEGAL
11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
11
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
11
L
L
H
H
BA, RA
ACT
ILLEGAL
11
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
相关PDF资料 |
PDF描述 |
|---|---|
| HY5DV651622T-G55 | DDR Synchronous DRAM |
| HY5DV651622T-G6 | DDR Synchronous DRAM |
| HY5DV651622T-G7 | DDR Synchronous DRAM |
| HY5PS121623F | 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M |
| HY5PS121623LF | 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5DV651622T-G55 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DDR Synchronous DRAM |
| HY5DV651622T-G6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DDR Synchronous DRAM |
| HY5DV651622T-G7 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DDR Synchronous DRAM |
| HY5DW113222FM | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DW113222FM-2 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
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