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参数资料
| 型号： | HY5V16CF |
| 英文描述： | 1Mx16|3.3V|4K|H|SDR SDRAM - 16M |
| 中文描述： | 1Mx16 | 3.3 | 4K的|魔| SDRAM的特别提款权- 1,600 |
| 文件页数： | 7/11页 |
| 文件大小： | 102K |
| 代理商： | HY5V16CF |
HY5V16CF
Rev. 0.0/Jun.01
7
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate
Parameter
S y m b o l
-H
-S
Unit
Note
Min
M a x
Min
M a x
System clock
cycle time
C A S Latency = 3
tCK3
7.5
1000
10
1000
n s
C A S Latency = 2
tCK2
10
10
n s
Clock high pulse width
t C H W
3
-
3
-
n s
1
Clock low pulse width
tCLW
3
-
3
-
n s
1
Access time from
clock
C A S Latency = 3
tAC3
6
6
n s
2
C A S Latency = 2
tAC2
8
-
8
n s
Data-out hold time
tOH
2.5
-
2.5
-
n s
Data-Input setup time
t D S
2
-
2
-
n s
1
Data-Input hold time
tDH
1
-
1
-
n s
1
Address setup time
tAS
2
-
2
-
n s
1
Address hold time
tAH
1
-
1
-
n s
1
CKE setup time
tCKS
2
-
2
-
n s
1
CKE hold time
tCKH
1
-
1
-
n s
1
Command setup time
t C S
2
-
2
-
n s
1
C o m m a n d h o l d t i m e
tCH
1
-
1
-
n s
1
CLK to data output in low Z-time
tOLZ
1.5
-
1
-
n s
CLK to data output
in high Z-time
C A S Latency = 3
t O H Z 3
5.4
6
n s
C A S Latency = 2
t O H Z 2
n s
相关PDF资料 |
PDF描述 |
|---|---|
| HY5V16CF-H | x16 SDRAM |
| HY5V16CF-S | x16 SDRAM |
| HY6116-10 | x8 SRAM |
| HY6116-12 | x8 SRAM |
| HY6116-15 | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5V16CF-H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SDRAM |
| HY5V16CF-S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SDRAM |
| HY5V22(L)F(P)-5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V22(L)F(P)-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V22(L)F(P)-6 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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