参数资料
型号: HY628100ALLT1
厂商: Hynix Semiconductor Inc.
英文描述: 128Kx8bit CMOS SRAM
中文描述: 128Kx8bit CMOS SRAM的
文件页数: 2/9页
文件大小: 128K
代理商: HY628100ALLT1
HY628100A Series
Rev.05 /Feb.99
2
ORDERING INFORMATION
Part No.
Speed
Power
Temp
Package
HY628100AG
HY628100ALG
HY628100ALLG
HY628100AT1
HY628100ALT1
HY628100ALLT1
Comment : 50ns is available with 30pF test load.
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
SOP
SOP
SOP
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
L-part
LL-part
L-part
LL-part
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
T
STG
P
D
I
OUT
T
SOLDER
Parameter
Rating
-0.5 to 7.0
0 to 70
-65 to 125
1.0
50
260
10
Unit
V
°
C
°
C
W
mA
°
C
sec
Power Supply, Input/Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliablity.
RECOMMENDED DC OPERATING CONDITION
T
A
=0
°
C to 700
°
C /-400
°
C to 85
°
C
Symbol
Parameter
Vcc
Supply Voltage
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.5
0.8
Unit
V
V
V
V
Note :
1. V
IL
= -3.0V for pulse width less than 30ns
TRUTH TABLE
/CS1
H
X
L
L
L
CS2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
MODE
I/O OPERATION
High-Z
High-Z
High-Z
Data Out
Data In
Standby
Output Disabled
Read
Write
Note :
1. H=V
IH
, L=V
IL
, X=don't care
相关PDF资料
PDF描述
HY628100AG 128Kx8bit CMOS SRAM
HY628100ALG 128Kx8bit CMOS SRAM
HY628100ALT1 128Kx8bit CMOS SRAM
HY628100AT1 128Kx8bit CMOS SRAM
HY628100BLLG-E 128K x8 bit 5.0V Low Power CMOS slow SRAM
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