参数资料
型号: HY628100BLG-E
厂商: Hynix Semiconductor Inc.
英文描述: 128K x8 bit 5.0V Low Power CMOS slow SRAM
中文描述: 128K的x8位5.0V低功耗CMOS SRAM的速度
文件页数: 8/10页
文件大小: 175K
代理商: HY628100BLG-E
HY628100B Series
DATA RETENTION ELECTRIC CHARACTERISTIC
T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E) / -40
é
to 85
é
(I), unless otherwise specified
Sym
Parameter
Test Condition
V
DR
Vcc for Data Retention
/CS1 > Vcc - 0.2V or CS2 < 0.2V,
V
IN
> Vcc - 0.2V or V
IN
< Vss + 0.2V
I
CCDR
Data
HY628100B
Vcc = 3.0V,
Retention
/CS1>Vcc-0.2V or CS2< 0.2V,
Current
HY628100B-E/I
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
tCDR
Chip Deselect to Data Retention Time
tR
Operating Recovery Time
Rev 12 / Apr.2001
7
Min
2.0
Typ
-
Max
-
Unit
V
L
LL
L
LL
-
-
-
-
0
2
1
2
1
-
-
50
10
50
15
-
-
uA
uA
uA
uA
ns
ns
tRC
(2)
Notes:
1. Typical values are under the condition of T
A
= 25
°
C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM 1
VCC
DATA RETENTION TIMING DIAGRAM 2
VCC
4.5V
CS1
VDR
CS1>VCC-0.2V
tCDR
tR
VSS
4.5V
2.2V
DATA RETENTION MODE
0.4V
VDR
tCDR
tR
VSS
CS2
DATA RETENTION MODE
CS2<0.2V
相关PDF资料
PDF描述
HY628100BLG-I 128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLT1 128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLT1-E 128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLT1-I 128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100B 128K x8 bit 5.0V Low Power CMOS slow SRAM
相关代理商/技术参数
参数描述
HY628100BLG-I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLG 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLG-70 制造商:未知厂家 制造商全称:未知厂家 功能描述:IC-SMD-SRAM 1MB
HY628100BLLG-E 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLG-I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM