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参数资料
| 型号： | HY628100BLG-I |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件页数： | 3/10页 |
| 文件大小： | 175K |
| 代理商： | HY628100BLG-I |
HY628100B Series
ORDERING INFORMATION
Part No.
Speed
Power
HY628100BLG
55/70/85
L-part
0~70
°
C
HY628100BLLG
55/70/85
LL-part
0~70
°
C
HY628100BLG-E
55/70/85
L-part
-25~85
°
C
HY628100BLLG-E
55/70/85
LL-part
-25~85
°
C
HY628100BLG-I
55/70/85
L-part
-40~85
°
C
HY628100BLLG-I
55/70/85
LL-part
-40~85
°
C
HY628100BLT1
55/70/85
L-part
0~70
°
C
HY628100BLLT1
55/70/85
LL-part
0~70
°
C
HY628100BLT1-E
55/70/85
L-part
-25~70
°
C
HY628100BLLT1-E
55/70/85
LL-part
-25~70
°
C
HY628100BLT1-I
55/70/85
L-part
-40~70
°
C
HY628100BLLT1-I
55/70/85
LL-part
-40~70
°
C
Comment : 50ns is available with 30pF test load.
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Vcc, V
IN,
V
OUT
Power Supply, Input/Output Voltage
T
A
Operating Temperature
T
STG
Storage Temperature
P
D
Power Dissipation
I
OUT
Data Output Current
T
SOLDER
Lead Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these
or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliablity.
TRUTH TABLE
/CS1
CS2
/WE
/OE
Mode
H
X
X
X
Deselected
X
L
X
X
Deselected
L
H
H
H
Output Disabled
L
H
H
L
Read
Data Out
L
H
L
X
Write
Note :
1. H=V
IH
, L=V
IL
, X=don't care( V
IH or
V
IL )
Rev 12 / Apr.2001
2
Temp
Package
SOP
SOP
SOP
SOP
SOP
SOP
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
Rating
-0.5 to 7.0
0 to 70
-25 to 85
-40 to 85
-65 to 125
1.0
50
260
10
Unit
V
°
C
°
C
°
C
°
C
W
mA
°
C
sec
Remark
HY628100B
HY628100B-E
HY628100B-I
I/O
Power
Standby
Standby
Active
Active
Active
High-Z
High-Z
High-Z
Data In
相关PDF资料 |
PDF描述 |
|---|---|
| HY628100BLLT1 | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLT1-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLT1-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY628100BLLG | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG-70 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:IC-SMD-SRAM 1MB |
| HY628100BLLG-E | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLT1 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
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