参数资料
型号: HY628100BLLG-I
厂商: Hynix Semiconductor Inc.
英文描述: 128K x8 bit 5.0V Low Power CMOS slow SRAM
中文描述: 128K的x8位5.0V低功耗CMOS SRAM的速度
文件页数: 1/10页
文件大小: 175K
代理商: HY628100BLLG-I
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 12 / Apr.2001 Hynix Semiconductor
HY628100B Series
128Kx8bit CMOS SRAM
Document Title
128K x8 bit 5.0V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
10 Initial Revision History Insert Jul.14.2000 Final
11 Marking Information Add Dec.04.2000 Final
Revised
-
E.T (-25~85
°
C), I.T (-40~85
°
C) Part Insert
-
AC Test Condition Add : 5pF Test Load
12 Changed Logo Apr.30.2001 Final
-
HYUNDAI -> hynix
-
Marking Information Change
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相关代理商/技术参数
参数描述
HY628100BLLT1 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLT1-E 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLLT1-I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLT1 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM
HY628100BLT1-E 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM