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参数资料
| 型号： | HY628100BLLT1-E |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件页数： | 6/10页 |
| 文件大小： | 175K |
| 代理商： | HY628100BLLT1-E |
HY628100B Series
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
READ CYCLE 2(Note 1,2,4)
tRC
Rev 12 / Apr.2001
5
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
READ CYCLE 3(Note 1,2,4)
/CS1
tACS
Data Valid
tCLZ
(3)
tCHZ
(3)
Data
Out
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and a high CS2.
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS1 in high for the standby, low for active
CS2 in low for the standby, high for active
CS2
Data Valid
High-Z
ADDR
Data
Out
tRC
/CS1
CS2
/OE
tAA
tACS
tOE
tCLZ
(3)
tOLZ
(3)
tOH
tCHZ
(3)
tOHZ
(3)
相关PDF资料 |
PDF描述 |
|---|---|
| HY628100BLLT1-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY628100BLLT1-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-E | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100G-10 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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