参数资料
型号: HY62SF16804B-DFC
厂商: Hynix Semiconductor Inc.
元件分类: DRAM
英文描述: 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
中文描述: 为512k x16位1.8V的超低功耗SRAM的速度进行全面的CMOS
文件页数: 2/10页
文件大小: 311K
代理商: HY62SF16804B-DFC
HY62SF16804B
Preliminary
DESCRIPTION
The HY62SF16804B is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
512K words by 16bits. The HY62SF16804B uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current/Icc(mA)
HY62SF16804B-C
1.65~2.3
70/85/100
HY62SF16804B-I
1.65~2.3
70/85/100
Note 1. C : Commercial, I : Industrial
2. Current value is max.
PIN CONNECTION
( Top View )
BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
/CS
Chip Select
I/O1~I/O16
/WE
Write Enable
A0~A18
/OE
Output Enable
Vcc
/LB
Lower Byte Control(I/O1~I/O8)
Vss
/UB
Upper Byte Control(I/O9~I/O16)
NC
Rev.00/May. 2001
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.2V(min) data retention
Standard pin configuration
- 48-fBGA
Standby Current(uA)
LL
SL
15
8
15
8
Temperature
(
°
C)
0~70
-40~85
3
3
Pin Function
Data Inputs / Outputs
Address Inputs
Power(1.65V~2.3V)
Ground
No Connection
/
LB
IO9
IO10
Vss IO12
A17
A7
IO4
Vcc
Vcc IO13
Vss A16
IO5
Vss
IO15
IO14
A14
A15
IO6
IO7
IO16
NC
A12
A13
/
WE
IO8
A18
A8
A9
A10
A11
NC
/
OE
A0
A1
A2
NC
/
UB
A3
A4
/
CS
IO1
IO11
A5
A6
IO2
IO3
1
2
3
4
5
6
A
B
C
D
E
F
G
H
MEMORY ARRAY
256K x 16
ROW
DECODER
S
W
D
B
I/O1
I/O8
I/O9
I/O16
C
D
B
D
P
A
B
A0
A18
/CS
/OE
/LB
/UB
/WE
相关PDF资料
PDF描述
HY62SF16804B-DFI 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-C 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-I 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-SFC RES, 33, 1/2W, TKF, 5%, 2010
HY62SF16804B-SFI 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
相关代理商/技术参数
参数描述
HY62SF16804B-DFI 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-I 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-SFC 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16804B-SFI 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
HY62SF16806A 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16|1.8V|70/85/100|Super Low Power Slow SRAM - 8M