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参数资料
| 型号： | HY62SF16804B |
| 厂商： | Hynix Semiconductor Inc. |
| 元件分类： | DRAM |
| 英文描述： | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| 中文描述： | 为512k x16位1.8V的超低功耗SRAM的速度进行全面的CMOS |
| 文件页数： | 6/10页 |
| 文件大小： | 311K |
| 代理商： | HY62SF16804B |
HY62SF16804B
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
READ CYCLE 2(Note 1,2,4)
Rev.00/May. 2001
5
tRC
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
tACS
Data Valid
tCLZ(3)
tCHZ(3)
Data
Out
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS and low /UB and /or /LB
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
ADDR
tRC
/CS
tAA
tACS
tOH
Data Valid
High-Z
Data
Out
/UB ,/ LB
/OE
tBA
tOE
tCLZ
(3)
tBLZ
(3)
tOLZ
(3)
tCHZ
(3)
tBHZ
(3)
tOHZ
(3)
相关PDF资料 |
PDF描述 |
|---|---|
| HY62SF16804B-DFC | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-DFI | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-C | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-I | 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFC | RES, 33, 1/2W, TKF, 5%, 2010 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY62SF16804B-C | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-DFC | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-DFI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
| HY62SF16804B-SFC | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM |
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