参数资料
型号: HYB39D512160TFL-37
厂商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 记忆谱
文件页数: 18/28页
文件大小: 2148K
代理商: HYB39D512160TFL-37
DRAM
M
odules
S
pecialty
DRAMs
Flash
DRAM
Components
25
Nomenclature TwinFlash Components
F lash
Temperature Range
C
=
Commercial (0 °C – + 70 °C)
Package
T
=
TSOP I 48-P-1220-0.5
Process Technology
A
=
170 nm Process Technology
B
=
170 nm Process Technology (Enhanced Write Speed)
Product Variation
0
=
Standard Product (Tape & Reel Packing)
2
=
Stacked Die (Tape & Reel Packing)
Organization
80
=
x 8
Memory Density
512
=
512 Mb
1G
=
1024 Mb
Memory Type
DS
=
Data SLC: TwinFlash Single-Level Cell (2 bit / cell)
Supply and
33
=
3.3 V core and 3 V I/O
I/O Voltage
31
=
3.3 V core and 1.8 V I/O
Prefix
HYF
=
Flash Memory Components
HYF
33
DS
512
80
0
A
T
C
(Example)
TwinFlash Components
Density
Organization
Page Size
Block Size
Core
I/O
Write
Sales
Ordering Code
Package
Voltage
Speed
Description
512 Mb
3 V
Normal
HYF33DS512800ATC
64 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
Enhanced
HYF33DS512800BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS512800BTC
1Gb
3 V
Normal
HYF33DS1G802ATC
128 M x 8
512 + 16 Bytes
16 K + 512 Bytes
3 V
Enhanced
HYF33DS1G802BTC
On request
P-TSOPI-48
1.8 V
Enhanced
HYF31DS1G802BTC
相关PDF资料
PDF描述
HYB39D512160TFL-5 MEMORY SPECTRUM
HYB39D512160TFL-7 MEMORY SPECTRUM
HYB39D512160TFL-75 MEMORY SPECTRUM
HYB39D512160TFL-7F surface mount silicon Zener diodes
HYB39D512160TG-37 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
相关代理商/技术参数
参数描述
HYB39D512160TFL-5 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39D512160TFL-7 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39D512160TFL-75 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39D512160TFL-7F 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:MEMORY SPECTRUM
HYB39D512160TG-3 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:MEMORY SPECTRUM