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参数资料
| 型号： | HYB39D512800TTL-7F |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 齐纳二极管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面贴装硅稳压二极管 |
| 文件页数： | 12/28页 |
| 文件大小： | 2148K |
| 代理商： | HYB39D512800TTL-7F |
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APRIL 2004. This edition of Memory Spectrum has been developed
to enable you to easily view the entire range of Infineon’s memory products.
For more related product information and the latest datasheets, please visit
our websites: www.infineon.com/memory and www.infineon.com/memory/flash.
DDR400 Components and DIMMs (PC3200)
2 GB DDR2 Unbuffered DIMM
4 GB DDR2 Registered DIMM
16 Mb and 32 Mb CellularRAM
512 Mb Mobile-RAM
“Green**”, DRAM Components and Modules
512 Mb and 1 Gb TwinNAND Components
SD Cards / MultiMediaCards
I ntr oduction
64 MB
128 MB
256 MB 512 MB
1 GB
2 GB
4 GB
Unbuffered DDR
++++
Registered DDR
++++
Registered DDR Reduced Height
+++++
SO-DIMM DDR
++++
Unbuffered DDR2
++++
Registered DDR2
+
++++
SO-DIMM DDR2
++++
** Lead & Halogen-Free
RLDRAM and CellularRAM are registered trademarks of Infineon Technologies AG. TwinFlash is
a trademark of Infineon Technologies AG, based on Saifun NROM technology.
64 MB
128 MB
256 MB 512 MB
1 GB
2 GB
4 GB
Unbuffered SDR
+
Registered SDR
++++
SO-DIMM SDR
+
Technology and Trends
As a leading memory products
supplier, Infineon continues to
expand its portfolio with the
recent introduction of:
DRAM Components
Double Data Rate (DDR / DDR2)
and Single Data Rate (SDR).
Synchronous Dynamic Random
Access Memory.
DRAM Modules
Double Data Rate (DDR / DDR2),
Dual Inline Memory Modules
(DIMMs).
Single Data Rate (SDR), Dual Inline
Memory Modules (DIMMs).
Flash Components
Thin Small Outline Package (TSOP).
Flash Cards
MultiMediaCards and SD Cards.
16 Mb
32 Mb
128 Mb
256 Mb
512 Mb
1 Gb
DDR DRAMs
+
DDR2 DRAMs
+
SDR DRAMs
+
Reduced Latency (RLDRAM )+
Graphics RAM
+
Mobile-RAM
+
CellularRAM
++
64 MB
128 MB
256 MB 512 MB
1 GB
2 GB
4 GB
MultiMediaCards
+
SD Cards
+
64 Mb
128 Mb
256 Mb 512 Mb
1 Gb
2 Gb
4 Gb
TwinFlash
++
相关PDF资料 |
PDF描述 |
|---|---|
| HYB39S256160DT-6 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HYB39S256160DT-7 | surface mount silicon Zener diodes |
| HYB39S256160DT-75 | surface mount silicon Zener diodes |
| HYB39S256160DT-8 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HYB39S256160DTL-6 | 256 MBit Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HYB39L128160AC | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-7.5 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB39L128160AC-75 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AC-8 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM |
| HYB39L128160AT | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
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