8Mx64 bits
PC133 SDRAM SO DIMM
based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.3/Dec. 01
2
HYM71V8M635HC(L)T6 Series
DESCRIPTION
The Hynix HYM71V8M635HC(L)T6
Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four
8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin
glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V8M635HC(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes
memory. The Hynix HYM71V8M635HC(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
PC133/PC100MHz support
144pin SDRAM SO DIMM
Serial Presence Detect with EEPROM
1.00” (25.40mm) Height PCB with double sided com-
ponents
Single 3.3
±0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM71V8M635HCT6-K
133MHz
4 Banks
4K
Normal
TSOP-II
Gold
HYM71V8M635HCT6-H
HYM71V8M635HCLT6-K
Low Power
HYM71V8M635HCLT6-H