参数资料
型号: HYS64D32300GU-6-B
厂商: INFINEON TECHNOLOGIES AG
英文描述: 184-Pin Unbuffered Dual-In-Line Memory Modules
中文描述: 184引脚缓冲双列内存模组
文件页数: 21/42页
文件大小: 976K
代理商: HYS64D32300GU-6-B
405
900
945
1260
1710
13
25
1890
2250
Data Sheet
21
Rev. 1.0, 2004-03
HYS[64/72]D[16/32/64][300/301/320][G/H]U–[5/6]–C
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 15
I
DD
Specification for PC3200
H
128MB
256MB
×
64
×
64
1 Rank
1 Rank
–5
–5
Typ.
Max.
Typ.
300
360
560
380
440
640
16
20
32
120
144
240
80
112
160
52
72
104
172
216
304
400
480
680
400
520
720
560
760
1120
6
11
11
840
1000
1680
P
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
I
DD6
I
DD7
H
H
H
H
256MB
×
72
1 Rank
–5
Typ.
630
720
36
270
180
117
342
765
810
H
H
512MB
×
64
2 Ranks
–5
Typ.
864
944
64
480
320
208
608
984
1024 1200
1424 1880
22
1984 2360
H
H
512MB
×
72
2 Ranks
–5
Typ.
972
1062
72
540
360
234
684
1107
1152
1602
25
2232
H
Unit
Note
1)2)
1) Module
I
DD
values are calculated on the basis of component
I
DD
and can be measured differently depending on actual to
DQ loading capacitance.
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the
I
DDx
values of the component data sheet as follows:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank modules
4) DQ I/O (
I
DDQ
) currents are not included in the calculations (see note 1)
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
Max.
720
800
40
288
224
144
360
800
840
1520
22
2000
Max.
810
900
45
324
252
162
Max.
1080
1160
80
576
448
288
720
1160
Max.
1215
1305
90
648
504
324
810
1305
1350
2115
50
2655
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
45
5)
3)4)
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