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参数资料
| 型号： | HZM8.2NB1TR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | MPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 193K |
| 代理商： | HZM8.2NB1TR |
HZM-N Series
Rev.5.00, Decl.14.2004, page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd *
1
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note:
1. See Fig. 3.
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V)*
1
Test
Condition
IR (A)
Test
Condition
rd ()
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZM2.0N
B
1.90
2.20
5
120
0.5
100
5
HZM2.2N
B
2.10
2.40
5
120
0.7
100
5
HZM2.4N
B
2.30
2.60
5
120
1.0
100
5
B
2.50
2.90
B1
2.50
2.75
HZM2.7N
B2
2.65
2.90
5
120
1.0
110
5
B
2.80
3.20
B1
2.80
3.05
HZM3.0N
B2
2.95
3.20
5
50
1.0
120
5
B
3.10
3.50
B1
3.10
3.35
HZM3.3N
B2
3.25
3.50
5
20
1.0
130
5
B
3.40
3.80
B1
3.40
3.65
HZM3.6N
B2
3.55
3.80
5
10
1.0
130
5
B
3.70
4.10
B1
3.70
3.97
HZM3.9N
B2
3.87
4.10
5
10
1.0
130
5
B
4.01
4.48
B1
4.01
4.21
B2
4.15
4.34
HZM4.3N
B3
4.28
4.48
5
10
1.0
130
5
B
4.42
4.90
B1
4.42
4.61
B2
4.55
4.75
HZM4.7N
B3
4.69
4.90
5
10
1.0
130
5
B
4.84
5.37
B1
4.84
5.04
B2
4.98
5.20
HZM5.1N
B3
5.14
5.37
5
1.5
130
5
B
5.31
5.92
B1
5.31
5.55
B2
5.49
5.73
HZM5.6N
B3
5.67
5.92
5
2.5
80
5
Note:
1. Tested with pulse (PW = 40 ms)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HZM9.1N | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM9.1NB | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM9.1NB1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM9.1NB1TL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HZM9.1NB2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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