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参数资料
| 型号： | HZS13NB2 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 12.875 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | MHD, 2 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 31K |
| 代理商： | HZS13NB2 |
HZS-N Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power
Supply
ADE-208-124 (Z)
Rev. 0
Features
Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suitedfor
stabilized power supply, etc.
Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-N Series
Type No.
MHD
Outline
1. Cathode
2. Anode
Cathode band
Type No.
1
2
B
7.5
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| HZS4.7NB2 | 4.68 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS15NB2 | 14.26 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS3.6NB1-E | 3.58 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS36NB1 | 32.97 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| HZS36NB4 | 34.89 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HZS13N-B2 | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS13N-B2(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS13NB3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB4 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS15 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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