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参数资料
| 型号： | HZS15NB2 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 14.26 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | MHD, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 74K |
| 代理商： | HZS15NB2 |
HZS-N Series
REJ03G0185-0300 Rev.3.00 Nov 12, 2007
Page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V)*
1
Test
Condition
IR (μA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
B1
1.88
2.10
HZS2.0N
B2
2.02
2.20
5
120
0.5
100
5
B1
2.12
2.30
HZS2.2N
B2
2.22
2.41
5
120
0.7
100
5
B1
2.33
2.52
HZS2.4N
B2
2.43
2.63
5
120
1.0
100
5
B1
2.54
2.75
HZS2.7N
B2
2.69
2.91
5
100
1.0
110
5
B1
2.85
3.07
HZS3.0N
B2
3.01
3.22
5
50
1.0
120
5
B1
3.16
3.38
HZS3.3N
B2
3.32
3.53
5
20
1.0
120
5
B1
3.47
3.68
HZS3.6N
B2
3.62
3.83
5
10
1.0
120
5
B1
3.77
3.98
HZS3.9N
B2
3.92
4.14
5
1.0
120
5
B1
4.05
42.6
B2
4.20
4.40
HZS4.3N
B3
4.34
4.53
5
1.0
120
5
B1
4.47
4.65
B2
4.59
4.77
HZS4.7N
B3
4.71
4.91
5
1.0
100
5
B1
4.85
5.03
B2
4.97
5.18
HZS5.1N
B3
5.12
5.35
5
1.5
70
5
B1
5.29
5.52
B2
5.46
5.70
HZS5.6N
B3
5.64
5.88
5
2.5
40
5
B1
5.81
6.06
B2
5.99
6.24
HZS6.2N
B3
6.16
6.40
5
3.0
30
5
B1
6.32
6.59
B2
6.52
6.79
HZS6.8N
B3
6.70
6.97
5
2
3.5
25
5
Note:
1. Tested with pulse (PW = 40 ms)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HZS15N-B2(TD) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS15NB3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS15NB4 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS16 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS161 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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