参数资料
型号: HZS2.7NB1
元件分类: 参考电压二极管
英文描述: 2.645 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
封装: MHD, 2 PIN
文件页数: 2/7页
文件大小: 31K
代理商: HZS2.7NB1
HZS-N Series
Electrical Characteristics (Ta = 25
°C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z (V)*
Test
Condition
I
R (A)
Test
Condition
r
d ()
Test
Condition
Type
Grade
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
HZS2.0N
B1
1.88
2.10
5
120
0.5
100
5
B2
2.02
2.20
HZS2.2N
B1
2.12
2.30
5
120
0.7
100
5
B2
2.22
2.41
HZS2.4N
B1
2.33
2.52
5
120
1.0
100
5
B2
2.43
2.63
HZS2.7N
B1
2.54
2.75
5
100
1.0
110
5
B2
2.69
2.91
HZS3.0N
B1
2.85
3.07
5
50
1.0
120
5
B2
3.01
3.22
HZS3.3N
B1
3.16
3.38
5
20
1.0
120
5
B2
3.32
3.53
HZS3.6N
B1
3.47
3.68
5
10
1.0
120
5
B2
3.62
3.83
HZS3.9N
B1
3.77
3.98
5
1.0
120
5
B2
3.92
4.14
HZS4.3N
B1
4.05
4.26
5
1.0
120
5
B2
4.20
4.40
B3
4.34
4.53
HZS4.7N
B1
4.47
4.65
5
1.0
100
5
B2
4.59
4.77
B3
4.71
4.91
HZS5.1N
B1
4.85
5.03
5
1.5
70
5
B2
4.97
5.18
B3
5.12
5.35
HZS5.6N
B1
5.29
5.52
5
2.5
40
5
B2
5.46
5.70
B3
5.64
5.88
HZS6.2N
B1
5.81
6.06
5
3.0
30
5
B2
5.99
6.24
B3
6.16
6.40
Note:
Tested with pulse (P
W = 40ms)
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