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参数资料
| 型号： | IBB110PTR |
| 厂商： | CLARE INC |
| 元件分类： | 继电器，输入/输出模块 |
| 英文描述： | Integrated Telecom Circuits |
| 中文描述： | DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 3750 V ISOLATION-MAX |
| 封装： | SOIC-16 |
| 文件页数： | 2/6页 |
| 文件大小： | 383K |
| 代理商： | IBB110PTR |
www.clare.com
IBB110P
Rev. 2
Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.
Absolute Maximum Ratings (@ 25 C)
2
Parameter
Total Package Dissipation
Isolation Voltage
Input to Output
Operational Temperature
Storage Temperature
Soldering Temperature
(10 Seconds Max.)
Min
-
Typ
-
Max Units
1
1
W
3750
-40
-40
-
-
-
-
-
-
V
RMS
°C
°C
°C
+85
+125
+220
1
Above 25 derate linerity 1.67mw/C
Electrical Characteristics
Parameter
Relay Portion
Output Characteristics @ 25°C
Load Voltage (Peak)
Load Current (Continuous)
Peak Load Current
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Relay Portion
Input Characteristics @ 25°C
Input Control Current
Input Dropout Current
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Detector Portion
Output Characteristics @ 25°C
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Detector Portion
Input Characteristics @ 25°C
Input Control Current
Input Voltage Drop
Input Current
(Detector must be off)
Input to Output Capacitance
Input to Output Isolation
Conditions
Symbol
Min
Typ
Max
Units
I
L
= 1μA
-
10ms
I
L
=100mA
V
L
=350V; T
J
=25°C
V
L
I
L
I
LPK
R
ON
I
LEAK
-
-
-
-
-
-
-
-
-
-
350
100
350
35
1
V
mA
mA
μA
I
F
=5mA, V
L
=10V
I
F
=5mA, V
L
=10V
V
L
=50V, f=1MHz
T
ON
T
OFF
-
-
-
-
-
-
3
3
-
ms
ms
pF
25
I
L
=100mA
I
L
=1mA
I
F
=5mA
-
V
R
=5V
I
F
I
F
V
F
V
R
I
R
5
-
-
50
-
1.4
5
10
mA
mA
V
V
μA
0.4
0.9
-
-
1.2
-
-
I
C
=10μA
VCE=5V, I
F
=0mA
I
C
=2mA, I
F
=16mA
I
F
=6mA, V
CE
=0.5V
BV
CEO
I
CEO
V
SAT
C
TR
20
-
-
33
50
50
0.3
-
-
V
nA
V
%
500
0.5
-
I
C
=2mA,VCE=0.5V
IF=5mA
I
C
=1μA, VCE=5V
I
F
6
2
-
mA
V
μA
I
CEO
-
0.9
5
1.2
25
1.4
-
V
L
=50V, f=1MHz
-
C
I/O
V
I/O
-
3
-
-
-
pF
3750
V
RMS
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