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参数资料
型号： IBM0118160B
厂商： IBM Microeletronics
英文描述： 1M x 16 10/10 DRAM(16M位 动态RAM（带20条地址线，其中10条为行地址选通，10条为列地址选通）)
中文描述： 100万× 16 10/10的DRAM（1,600位动态随机存储器（带20条地址线，其中10条为行地址选通，10条为列地址选通））
文件页数： 1/28页
文件大小： 486K
代理商： IBM0118160B
IBM0118160
IBM0118160B IBM0118160P
1M x 16 10/10 DRAM
IBM0118160M
43G9388
SA14-4209-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 28
Features
1,048,576 word by 16 bit organization
Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
Standard Power (SP) and Low Power (LP)
1024 Refresh Cycles
- 16 ms Refresh Rate (SP version)
- 128 ms Refresh Rate (LP version)
High Performance:
-50
-60
Units
t
RAC
RAS Access Time
50
60
ns
t
CAC
CAS Access Time
13
15
ns
t
AA
Column Address Access Time
25
30
ns
t
RC
Cycle Time
95
110
ns
t
PC
Fast Page Mode Cycle Time
35
40
ns
Low Power Dissipation
- Active (max) - 120 mA / 100 mA
- Standby: TTL Inputs (max) - 2.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200
μ
A (3.3 Volt)
- 300
μ
A (5.0 Volt)
2 CAS
Read-Modify-Write
RAS Only and CAS before RAS
Hidden Refresh
Package:
- TSOP-II 50/44 (400mil x 825mil)
- SOJ 42/42 (400mil)
Description
The IBM0118160 is a dynamic RAM organized
1,048,576 words by 16 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5
μ
m
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 20
addresses required to access any bit of data are
multiplexed (10 are strobed with RAS, 10 are
strobed with CAS).
Pin Assignments
(Top View)
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
90
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
V
CC
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
50/44 TSOP
42/42 SOJ
Pin Description
RAS
Row Address Strobe
LCAS / UCAS
L/U Column Address Strobe
WE
Read/Write Input
A0 - A9
Address Inputs
OE
Output Enable
I/O0 - I/O15
Data Input/Output
V
CC
Power (+3.3V or +5.0V)
V
SS
Ground
IBM0118160 1M x 1610/10, 5.0VMMDD37DSU-011010928. IBM0118160P1M x 1610/10, 3.3V, LP, SRMMDD37DSU-011010928. IBM0118160M 1M x 1610/10, 5.0V, LP, SRMMDD37DSU-011010928. IBM0118160B1M x 1610/10, 3.3VMMDD37DSU-011010928.
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0118160M 1M x 16 10/10 DRAM(16M位 动态RAM（带20条地址线，其中10条为行地址选通，10条为列地址选通）)
IBM0118160P 1M x 16 10/10 DRAM(16M位 动态RAM（带20条地址线，其中10条为行地址选通，10条为列地址选通）)
IBM0118165 1M x 16 10/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中10条为行地址选通，10条为列地址选通）)
IBM0118165B 1M x 16 10/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中10条为行地址选通，10条为列地址选通）)
IBM0118165M 1M x 16 10/10 EDO DRAM(16M位 动态RAM（超页面模式读写并带20条地址线，其中10条为行地址选通，10条为列地址选通）)
相关代理商/技术参数
参数描述
IBM0118160J3F60 制造商:IBM 功能描述:51H057
IBM0118165PT3E6R 制造商:IBM 功能描述:*
IBM011816DT3D60 制造商:IBM 功能描述:28H4998
IBM0164405BT3D50 制造商:IBM 功能描述:20L9262
IBM0165165PT3C50 制造商:IBM 功能描述:75H3120
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