参数资料
型号: IC42S81600-8T(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4银行(128 - Mbit的)同步动态RAM
文件页数: 5/69页
文件大小: 1118K
代理商: IC42S81600-8T(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
13
DR023-0E 6/11/2004
OPERATION COMMAND TABLE(continue)
Current State Command
Operation
CS
RAS
CAS
WE
Address
Write with auto
DESL
Continue burst to end
→ write recovering with auto precharge HX
X
precharge
NOP
Continue burst to end
→ write recovering with auto precharge L
HHH
X
BST
Illegal
L
H
L
X
READ / READA
Illegal(11)
LH
BA, CA, A10
WRIT/WRITA
Illegal(11)
LH
L
BA, CA, A10
ACT
Illegal(3, 11)
LL
H
BR, RA
PRE/PALL
Illegal(3, 11)
LL
H
L
BA, A10
REF/SELF
Illegal
L
H
X
MRS
Illegal
LLLL
Op-Code
Precharging
DESL
Nop
→ Enter idle after tRP
HX
X
NOP
Nop
→ Enter idle after tRP
L
HHH
X
BST
Nop
→ Enter idle after tRP
LH
H
L
X
READ/READA
Illegal(3)
LH
BA, CA, A10
WRIT/WRITA
Illegal(3)
LH
L
BA, CA, A10
ACT
Illegal(3)
LL
H
BR, RA
PRE/PALL
Nop
→ Enter idle after tRP
LL
H
L
BA, A10
REF/SELF
Illegal
L
H
X
MRS
Illegal
LLLL
Op-Code
Row activating
DESL
Nop
→ Enter row active after tRCD
HX
X
NOP
Nop
→ Enter row active after tRCD
L
HHH
X
BST
Nop
→ Enter row active after tRCD
LH
H
L
X
READ/READA
Illegal(3)
LH
BA, CA, A10
WRIT/WRITA
Illegal(3)
LH
L
BA, CA, A10
ACT
Illegal(3, 9)
LL
H
BR, RA
PRE/PALL
Illegal(3)
LL
H
L
BA, A10
REF/SELF
Illegal
L
H
X
MRS
Illegal
LLLL
Op-Code
Write
DESL
Nop
→ Enter row active after tDPL
HX
X
recovering
NOP
Nop
→ Enter row active after tDPL
L
HHH
X
BST
Nop
→ Enter row active after tDPL
LH
H
L
X
READ/READA
Start read, Determine AP(8)
LH
BA, CA, A10
WRIT/WRITA
New write, Determine AP
LH
L
BA, CA, A10
ACT
Illegal(3)
LL
H
BR, RA
PRE/PALL
Illegal(3)
LL
H
L
BA, A10
REF/SELF
Illegal
L
H
X
MRS
Illegal
LLLL
Op-Code
相关PDF资料
PDF描述
IC42S81600-8TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相关代理商/技术参数
参数描述
IC42S81600-8TI 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI(G) 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TIG 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM