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参数资料
| 型号： | IC42S81600-8TG |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4银行（128 - Mbit的）同步动态RAM |
| 文件页数： | 12/69页 |
| 文件大小： | 1118K |
| 代理商： | IC42S81600-8TG |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
2
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Single 3.3V (± 0.3V) power supply
High speed clock cycle time -6: 166MHz<3-3-3>,
-7H: 133MHz<2-2-2>, -7: 133MHz<3-3-3>, -8:
100MHz<2-2-2>
Fully synchronous operation referenced to clock
rising edge
Possible to assert random column access in
every cycle
Quad internal banks contorlled by BA0 & BA1
(Bank Select)
Byte control by LDQM and UDQM for
IC42S16800
Programmable Wrap sequence (Sequential /
Interleave)
Programmable burst length (1, 2, 4, 8 and full
page)
Programmable CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
X8, X16 organization
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64ms
Burst termination by Burst stop and Precharge
command
Package 400mil 54-pin TSOP-2
DESCRIPTION
The IC42S81600 and IC42S16800 are high-speed
134,217,728-bit synchronous dynamic random-
access memories, organized as 4,194,304 x 8 x 4 and
2,097,152 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data
transfer using the pipeline architecture. All input and
outputs are synchronized with the positive edge of the
clock.The synchronous DRAMs are compatible with
Low Voltage TTL (LVTTL).These products are pack-
aged in 54-pin TSOP-2.
4(2)M x 8(16) Bits x 4 Banks (128-MBIT)
SYNCHRONOUS DYNAMIC RAM
相关PDF资料 |
PDF描述 |
|---|---|
| IC42S81600-8TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IC42S81600-8TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI(G) | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TIG | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6T | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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