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参数资料
| 型号： | IC42S81600L-6T |
| 英文描述： | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 4（2）M中的x 8（16）位× 4银行（128 - Mbit的）同步动态RAM |
| 文件页数： | 6/69页 |
| 文件大小： | 1118K |
| 代理商： | IC42S81600L-6T |
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
14
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
OPERATION COMMAND TABLE(continue)
Current State Command
Operation
CS
RAS
CAS
WE
Address
Write
DESL
Nop
→ Enter precharge after tDPL
HX
X
recovering
NOP
Nop
→ Enter precharge after tDPL
L
HHH
X
with auto
BST
Nop
→ Enter precharge after tDPL
LH
H
L
X
precharge
READ/READA
Illegal(3 ,8, 11)
LH
BA, CA, A10
WRIT/WRITA
Illegal(3,11)
LH
L
BA, CA, A10
ACT
Illegal(3, 11)
LL
H
BR, RA
PRE/PALL
Illegal(3, 11)
LL
H
L
BA, A10
REF/SELF
Illegal
L
H
X
MRS
Illegal
LLLL
Op-Code
Auto
DESL
Nop Enter idle after tRC
HX
X
Refreshing
NOP/BST
Nop Enter idle after tRC
LH
H
X
READ/WRIT
Illegal
L
H
L
X
ACT/PRE/PALL
Illegal
L
H
X
REF/SELF/MRS
Illegal
L
X
Mode
DESL
Nop
→ Enter idle after 2 Clocks
HX
X
register
NOP
Nop
→ Enter idle after 2 Clocks
L
HHH
X
setting
BST
Illegal
L
H
L
X
READ/WRIT
Illegal
L
H
L
X
ACT/PRE/PALL/
Illegal
L
X
REF/SELF/MRS
Notes:
1. All entries assume that CKE was active (High level) during the preceding clock cycle.
2. If both banks are idle, and CKE is inactive (Low level), the device will enter Power downmode. All input buffers except CKE
will be disabled.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address(BA), depending on the
state of that bank.
4. If both banks are idle, and CKE is inactive (Low level), the device will enter Self refresh mode. All input buffers except CKE
will be disabled.
5. Illegal if tRCD is not satisfied.
6. Illegal if tRAS is not satisfied.
7. Must satisfy burst interrupt condition.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Must mask preceding data which don’t satisfy tDPL .
10. Illegal if tRRD is not satisfied.
11. Illegal for single bank, but legal for other banks in multi-bank devices.
相关PDF资料 |
PDF描述 |
|---|---|
| IC42S81600L-6T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TI | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TIG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-7T | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IC42S81600L-6T(G) | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TG | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TI | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TI(G) | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-6TIG | 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
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