参数资料
型号: IC42S81600L-8TI
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4银行(128 - Mbit的)同步动态RAM
文件页数: 15/69页
文件大小: 1118K
代理商: IC42S81600L-8TI
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
22
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of tDPL(min.) after the last data word
input to the device.
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is valid. In the
table below, minus means clocks before the reference; plus means clocks after the reference.
CAS
CAS latency
Read
Write
2-1
+ tDPL((min.)
3-2
+ tDPL((min.)
WRITE with AUTO PRECHRGE
Burst lengh = 4
CLK
Command
CAS
latency = 2
DQ
Command
CAS
latency = 3
DQ
Remark WRITA means WRITE with AUTO Precharge
Hi - Z
DB0
DB3
DB2
DB1
WRITA B
T0
T1
T2
T3
T4
T5
T6
T7
Hi - Z_
T8
tDPL
DB0
DB3
DB2
DB1
AUTO PRECHARGE starts
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相关代理商/技术参数
参数描述
IC42S81600L-8TI(G) 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-8TIG 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S8200 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1Meg x 8 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S8200-6T 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1Meg x 8 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S8200-6TI 制造商:ICSI 制造商全称:Integrated Circuit Solution Inc 功能描述:1Meg x 8 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM