参数资料
型号: ICS180MI-01LFT
厂商: IDT, Integrated Device Technology Inc
文件页数: 3/9页
文件大小: 0K
描述: IC CLOCK GEN LOW EMI 8-SOIC
标准包装: 2,500
类型: 扩展频谱时钟发生器
PLL:
输入: 时钟,晶体
输出: CMOS
电路数: 1
比率 - 输入:输出: 1:1
差分 - 输入:输出: 无/无
频率 - 最大: 28MHz
除法器/乘法器: 无/无
电源电压: 3.135 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
其它名称: 180MI-01LFT
ICS180-01
LOW EMI CLOCK GENERATOR
SSCG
IDT / ICS LOW EMI CLOCK GENERATOR
3
ICS180-01
REV D 051310
External Components
The ICS180-01 requires a minimum number of external
components for proper operation.
Decoupling Capacitor
A decoupling capacitor of 0.01F must be connected
between VDD and GND on pins 6 and 3, as close to
these pins as possible. For optimum device
performance, the decoupling capacitor should be
mounted on the component side of the PCB. Avoid the
use of vias in the decoupling circuit.
Series Termination Resistor
When the PCB trace between the clock output and the
load is over 1 inch, series termination should be used.
To series terminate a 50
trace (a commonly used trace
impedance) place a 33
resistor in series with the clock
line, as close to the clock output pin as possible. The
nominal impedance of the clock output is 20
.
value of these capacitors is given by the following
equation:
PCB Layout Recommendations
For optimum device performance and lowest output
phase noise, the following guidelines should be
observed.
1) The 0.01F decoupling capacitor should be mounted
on the component side of the board as close to the VDD
pin as possible. No vias should be used between the
decoupling capacitor and VDD pin. The PCB trace to
VDD pin should be kept as short as possible, as should
the PCB trace to the ground via.
2) To minimize EMI, the 33
series termination resistor
(if needed) should be placed close to the clock output.
3) An optimum layout is one with all components on the
same side of the board, minimizing vias through other
signal layers. Other signal traces should be routed away
from the ICS180-01. This includes signal traces just
underneath the device, or on layers adjacent to the
ground plane layer used by the device.
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