参数资料
型号: ICS570GI-01T
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/10页
文件大小: 0K
描述: IC MULTIPLIER/ZDB 8-MSOP
产品变化通告: Product Discontinuation 13/May/2009
标准包装: 2,500
类型: 零延迟缓冲器,扩展频谱时钟发生器,零延迟缓冲器
PLL:
输入: 时钟
输出: CMOS
电路数: 1
比率 - 输入:输出: 1:1
差分 - 输入:输出: 无/无
频率 - 最大: 55MHz
除法器/乘法器: 无/是
电源电压: 3.15 V ~ 3.45 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
其它名称: 570GI-01T
ICS557-01
PCI-EXPRESS GEN1 CLOCK SOURCE
PCIE
IDT PCI-EXPRESS GEN1 CLOCK SOURCE
6
ICS557-01
REV P 072512
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the ICS557-01. These ratings are stress
ratings only. Functional operation of the device at these or any other conditions above those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended
operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85
° C
1 Single edge is monotonic when transitioning through region.
2 Inputs with pull-ups/-downs are not included.
Item
Rating
Supply Voltage, VDD, VDDA
5.5 V
All Inputs and Outputs
-0.5 V to VDD+0.5 V
Ambient Operating Temperature (commercial)
0 to +70
° C
Ambient Operating Temperature (industrial)
-40 to +85
° C
Storage Temperature
-65 to +150
° C
Junction Temperature
125
° C
Soldering Temperature
260
° C
ESD Protection (Input)
2000 V min. (HBM)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Supply Voltage
V
3.135
3.465
Input High Voltage1
VIH
2.0
VDD +0.3
V
Input Low Voltage1
VIL
VSS-0.3
0.8
V
Input Leakage Current2
IIL
0 < Vin < VDD
-5
5
μA
Operating Supply Current
IDD
With 50
Ω and 2 pF load
55
mA
IDDOE
OE =Low
35
mA
Input Capacitance
CIN
Input pin capacitance
7
pF
Output Capacitance
COUT
Output pin capacitance
6
pF
Pin Inductance
LPIN
5nH
Output Resistance
Rout
CLK outputs
3.0
k
Ω
Pull-up Resistor
RPUP
OE
60
k
Ω
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