参数资料
型号: ICS83026BGI-01LFT
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/15页
文件大小: 0K
描述: IC CLK BUFFER 1:2 350MHZ 8-TSSOP
标准包装: 2,500
系列: HiPerClockS™
类型: 扇出缓冲器(分配)
电路数: 1
比率 - 输入:输出: 1:2
差分 - 输入:输出: 是/无
输入: HCSL,LVDS,LVHSTL,LVPECL,SSTL
输出: LVCMOS,LVTTL
频率 - 最大: 350MHz
电源电压: 3.135 V ~ 3.465 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
其它名称: 83026BGI-01LFT
83026BMI-01
3
REV. A AUGUST 4, 2010
ICS83026I-01
LOW SKEW, 1-TO-2
DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER
TABLE 3A. POWER SUPPLY DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 1.71V
TO
3.465V, TA = -40°C TO 85°C
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TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 2.375V
TO
3.465V, TA = -40°C TO 85°C
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ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD + 0.5 V
Outputs, V
O
-0.5V to V
DDO + 0.5V
Package Thermal Impedance,
θ
JA
8 Lead SOIC
112.7°C/W (0 lfpm)
8 Lead TSSOP
101.7°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the
DC Characteristics or AC Character-
istics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
TABLE 3C. LVCMOS / LVTTL DC CHARACTERISTICS, V
DD = 3.3V ± 5%, VDDO = 1.8V ± 5%, T
A
= -40°C TO 85°C
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